FDQ7238AS
FDQ7238AS Datasheet
FDQ7238AS
| Part | Datasheet |
|---|---|
FDQ7238AS |
FDQ7238AS (pdf) |
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| FDQ7238AS May 2008 FDQ7238AS Dual Notebook Power Supply N-Channel in SO-14 Package The FDQ7238AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. The FDQ7238AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. • Q2 14 A, 30V. RDS on = VGS = 10V RDS on = VGS = 4.5V • Q1 11 A, 30V. RDS on = VGS = 10V RDS on = 16 VGS = 4.5V SO-14 pin 1 S2 G1G2 Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a & 1b Note 1c & 1d Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a & 1b Note 1c & 1d Package Marking and Ordering Information Device Marking FDQ7238AS Device FDQ7238AS Reel Size 13” ±20 ±20 −55 to +150 Units °C/W Tape width 16mm Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDQ7238AS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS IDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate-Body Leakage On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on Drain Current Forward Transconductance Dynamic Characteristics |
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