FDQ7236AS

FDQ7236AS Datasheet

FDQ7236AS

Part	Datasheet
FDQ7236AS	FDQ7236AS (pdf)

PDF Datasheet Preview
FDQ7236AS January 2011 FDQ7236AS Dual Notebook Power Supply N-Channel in SO-14 Package The FDQ7236AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. The FDQ7236AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode. • Q2 14 A, 30V. RDS on = VGS = 10V RDS on = VGS = 4.5V • Q1 11 A, 30V. RDS on = VGS = 10V RDS on = 16 VGS = 4.5V SO-14 pin 1 S2 G1G2 Absolute Maximum Ratings TA = 25°C unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Note 1a Note 1a & 1b Note 1c & 1d Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a & 1b Note 1c & 1d Package Marking and Ordering Information Device Marking FDQ7236AS Device FDQ7236AS Reel Size 13” ±20 ±20 −55 to +150 Units °C/W Tape width 16mm Quantity 2500 units 2011 Fairchild Semiconductor Corporation FDQ7236AS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Off Characteristics BVDSS IDSS Drain-Source Breakdown VGS = 0 V, ID = 1 mA Voltage VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate-Body Leakage On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID on Drain Current Forward Transconductance Dynamic Characteristics

PDF Datasheet Preview

FDQ7236AS

January 2011

FDQ7236AS

Dual Notebook Power Supply N-Channel in SO-14 Package

The FDQ7236AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side switch Q1 is designed with specific emphasis on reducing switching losses while the low-side switch Q2 is optimized to reduce conduction losses using Fairchild’s SyncFET TM technology. The FDQ7236AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode.
• Q2 14 A, 30V. RDS on = VGS = 10V RDS on = VGS = 4.5V
• Q1 11 A, 30V. RDS on = VGS = 10V RDS on = 16 VGS = 4.5V

SO-14
pin 1

S2 G1G2

Absolute Maximum Ratings TA = 25°C unless otherwise noted

VDSS VGSS ID

TJ, TSTG

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous
- Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a & 1b Note 1c & 1d

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Note 1a & 1b

Note 1c & 1d
Package Marking and Ordering Information

Device Marking FDQ7236AS

Device FDQ7236AS

Reel Size 13”
±20
±20
−55 to +150

Units
°C/W

Tape width 16mm

Quantity 2500 units
2011 Fairchild Semiconductor Corporation

FDQ7236AS

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Off Characteristics

BVDSS

IDSS

Drain-Source Breakdown

VGS = 0 V,

ID = 1 mA

Voltage

VGS = 0 V,

ID = 250 µA

Breakdown Voltage Temperature Coefficient

ID = 10 mA, Referenced to 25°C ID = 250 µA, Referenced to 25°C

Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V

IGSS

Gate-Body Leakage

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source On-Resistance

ID on

Drain Current

Forward Transconductance

Dynamic Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDQ7236AS Datasheet file may be downloaded here without warranties.

Datasheet ID: FDQ7236AS 514271