FDPF14N30

FDPF14N30 Datasheet

FDPF14N30 N-Channel UniFETTM MOSFET

Part	Datasheet
FDPF14N30	FDPF14N30 (pdf)

Related Parts	Information
FDPF14N30T	FDPF14N30T

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FDPF14N30 N-Channel UniFETTM MOSFET FDPF14N30 N-Channel UniFETTM MOSFET 300 V, 14 A, 290 mΩ • RDS on = 290 mΩ Max. VGS = 10 V, ID = 7 A • Low Gate Charge Typ. 18 nC • Low Crss Typ. 17 pF • 100% Avalanche Tested • Improved dv/dt Capability • PDP TV • Uninterruptible Power Supply November 2013 UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts. TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 1 Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Drain current limited by maximum junction temperature. FDPF14N30 300 14 * 56 * ±30 330 14 35 -55 to +150 300 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDPF14N30 Unit V A V mJ A mJ V/ns W W/°C °C °C Unit °C/W 2007 Fairchild Semiconductor Corporation Package Marking and Ordering Information Part Number FDPF14N30 Top Mark FDPF14N30 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Conditions Off Characteristics BVDSS / IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics VGS = 0 V, ID = 250 uA ID = 250 uA, Referenced to 25°C VDS = 300 V, VGS = 0 V VDS = 240 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 uA VGS = 10 V, ID = 7 A Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = 7 A Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics VDS = 25 V, VGS = 0 V, f = MHz td on tr Turn-On Delay Time Turn-On Rise Time VDD = 150 V, ID = 14 A, VGS = 10 V, RG = 25 Ω

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FDPF14N30 N-Channel UniFETTM MOSFET

FDPF14N30

N-Channel UniFETTM MOSFET
300 V, 14 A, 290 mΩ
• RDS on = 290 mΩ Max. VGS = 10 V, ID = 7 A
• Low Gate Charge Typ. 18 nC
• Low Crss Typ. 17 pF
• 100% Avalanche Tested
• Improved dv/dt Capability
• PDP TV
• Uninterruptible Power Supply

November 2013

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts.

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Parameter

VDSS ID

IDM VGSS EAS IAR EAR dv/dt

Drain-Source Voltage

Drain Current Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Note 1

Note 2 Note 1 Note 1 Note 3

Power Dissipation

TC = 25°C
- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.

FDPF14N30 300 14 * * 56 * ±30 330 14 35
-55 to +150 300

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.

FDPF14N30

Unit V A V mJ A mJ

V/ns W

W/°C °C °C

Unit
°C/W
2007 Fairchild Semiconductor Corporation
Package Marking and Ordering Information

Part Number FDPF14N30

Top Mark FDPF14N30

Package TO-220F

Packing Method Tube

Reel Size N/A

Tape Width N/A

Quantity 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Parameter

Conditions

Off Characteristics

BVDSS
/ IDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage Current, Forward

IGSSR

On Characteristics

VGS = 0 V, ID = 250 uA

ID = 250 uA, Referenced to 25°C

VDS = 300 V, VGS = 0 V VDS = 240 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 uA VGS = 10 V, ID = 7 A

Forward Transconductance

Dynamic Characteristics

VDS = 40 V, ID = 7 A

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics

VDS = 25 V, VGS = 0 V, f = MHz
td on tr

Turn-On Delay Time Turn-On Rise Time

VDD = 150 V, ID = 14 A, VGS = 10 V, RG = 25 Ω

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Datasheet ID: FDPF14N30 514264