FDP8878
FDP8878 Datasheet
FDP8878 N-Channel MOSFET
| Part | Datasheet |
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FDP8878 |
FDP8878 (pdf) |
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| FDP8878 N-Channel MOSFET November 2005 FDP8878 N-Channel Logic Level MOSFET 30V, 40A, General Descriptions This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. - rDS ON = VGS = 10V, ID = 40A - rDS ON = VGS = 4.5V, ID = 36A - High performance trench technology for extremely low rDS ON - Low gate charge - High power and current handling capability - RoHS Compliant DRAIN FLANGE SOURCE DRAIN GATE TO-220AB FDP SERIES MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 25oC, VGS = 4.5V Pulsed Note 4 PD TJ, TSTG Single Pulse Avalanche Energy Note 1 Power dissipation Operating and Storage Temperature L = 1mH, IAS = 11A L = 43µH,IAS = 32A Thermal Characteristics Thermal Resistance, Junction to Case Note 2 Thermal Resistance, Junction to Ambient at 1000 seconds Note 3 Package Marking and Ordering Information Device Marking FDP8878 Device FDP8878 Package TO-220 Reel Size Tube Ratings 30 ±20 40 36 141 60 22 -55 to 175 Units V oC/W oC/W Tape Width n/a Quantity 45 units 2005 Fairchild Semiconductor Corporation FDP8878 N-Channel MOSFET Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Breakdown Voltage Temp. Coefficient ID = 250µA, Referenced to 25oC Zero Gate Voltage Drain Current Gate to Source Leakage Current VDS = 24V VGS = 0V VGS = ±20V TA = 150oC - mV/oC ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 250µA, Referenced to 25oC ID = 40A, VGS = 10V ID = 36A, VGS = 4.5V ID = 40, VGS = 10V, TA = 175oC mV/oC Dynamic Characteristics |
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