FDH5500
FDH5500 Datasheet
FDH5500 N-Channel UltraFET Power MOSFET
| Part | Datasheet |
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FDH5500 |
FDH5500 (pdf) |
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| FDH5500 N-Channel UltraFET Power MOSFET FDH5500 N-Channel UltraFET Power MOSFET 55V, 75A, - Typ rDS on = at VGS = 10V, ID = 75A - Typ Qg 10 = 118nC at VGS = 10V - Simulation Models -Temperature Compensated PSPICE and SABERTM Models - Peak Current vs Pulse Width Curve - UIS Rating Curve - Related Literature -TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ - Qualified to AEC Q101 - RoHS Compliant - DC Linear Mode Control - Solenoid and Motor Control - Switching Regulators - Automotive Systems June 2008 2008 Fairchild Semiconductor Corporation FDH5500 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VDGR VGS Drain to Source Voltage Drain to Gate Voltage RGS = Gate to Source Voltage Drain Current Continuous TC < 135oC, VGS = 10V Pulsed Single Pulse Avalanche Energy Power Dissipation Dreate above 25oC TJ, TSTG Operating and Storage Temperature Max. Lead Temp. for Soldering at 1.6mm from case for 10sec Tpkg Max. Package Temp. for Soldering Package Body for 10sec Thermal Characteristics Note 1 Note 1 Note 2 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area Ratings 55 ±20 75 See Figure 4 864 375 -55 to + 175 300 260 Units V A mJ W W/oC oC/W oC/W Package Marking and Ordering Information Device Marking FDH5500 Device FDH5500 Package TO-247 Reel Size Tube Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250µA, VGS = 0V VDS = 50V, VGS = 0V VDS = 45V TC = 150oC VGS = ±20V VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250µA rDS on Drain to Source On Resistance ID = 75A, VGS= 10V Dynamic Characteristics Typ Max Units ±100 nA Ciss Coss Crss Qg TOT Qg 10 Qg TH Qgs Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 30V ID = 75A RL = Ig = 1.0mA 3565 1310 206 268 nC 118 153 nC FDH5500 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted Parameter Switching Characteristics |
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