FDH5500

FDH5500 Datasheet


FDH5500 N-Channel UltraFET Power MOSFET

Part Datasheet
FDH5500 FDH5500 FDH5500 (pdf)
PDF Datasheet Preview
FDH5500 N-Channel UltraFET Power MOSFET

FDH5500

N-Channel UltraFET Power MOSFET 55V, 75A,
- Typ rDS on = at VGS = 10V, ID = 75A - Typ Qg 10 = 118nC at VGS = 10V - Simulation Models
-Temperature Compensated PSPICE and SABERTM Models
- Peak Current vs Pulse Width Curve - UIS Rating Curve
- Related Literature
-TB334, “Guidelines for Soldering Surface Mount Componets to PC Boards“ - Qualified to AEC Q101
- RoHS Compliant
- DC Linear Mode Control - Solenoid and Motor Control - Switching Regulators - Automotive Systems

June 2008
2008 Fairchild Semiconductor Corporation

FDH5500 N-Channel UltraFET Power MOSFET

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS VDGR VGS

Drain to Source Voltage

Drain to Gate Voltage RGS = Gate to Source Voltage Drain Current Continuous TC < 135oC, VGS = 10V Pulsed

Single Pulse Avalanche Energy

Power Dissipation

Dreate above 25oC

TJ, TSTG Operating and Storage Temperature

Max. Lead Temp. for Soldering at 1.6mm from case for 10sec

Tpkg

Max. Package Temp. for Soldering Package Body for 10sec

Thermal Characteristics

Note 1 Note 1

Note 2

Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247, 1in2 copper pad area

Ratings 55 ±20 75

See Figure 4 864 375
-55 to + 175 300 260

Units V A mJ W

W/oC
oC/W oC/W
Package Marking and Ordering Information

Device Marking FDH5500

Device FDH5500

Package TO-247

Reel Size Tube

Tape Width N/A

Quantity 30 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Off Characteristics

Test Conditions

BVDSS Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

On Characteristics

ID = 250µA, VGS = 0V

VDS = 50V, VGS = 0V

VDS = 45V

TC = 150oC

VGS = ±20V

VGS th Gate to Source Threshold Voltage

VGS = VDS, ID = 250µA
rDS on Drain to Source On Resistance

ID = 75A, VGS= 10V

Dynamic Characteristics

Typ Max Units
±100 nA

Ciss Coss Crss Qg TOT Qg 10 Qg TH Qgs Qgd

VDS = 25V, VGS = 0V, f = 1MHz

VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V

VDD = 30V ID = 75A RL = Ig = 1.0mA
3565
1310
206 268 nC
118 153 nC

FDH5500 N-Channel UltraFET Power MOSFET

Electrical Characteristics TC = 25oC unless otherwise noted

Parameter

Switching Characteristics
More datasheets: CL-V24-SXL-S | CL20 250120 | M5655 SL001 | M5655 SL005 | M5655 SL002 | 10827FW | 3536 | 53503-814 | 2256 | FFPF06U20DPTU


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDH5500 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDH5500 514176