FDP8441_F085
FDP8441_F085 Datasheet
FDP8441_F085 N-Channel MOSFET
| Part | Datasheet |
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FDP8441_F085 |
FDP8441_F085 (pdf) |
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| FDP8441_F085 N-Channel MOSFET MPLEMENTATION May 2010 FDP8441_F085 N-Channel MOSFET 40V, 80A, - Typ rDS on = at VGS = 10V, ID = 80A - Typ Qg 10 = 215nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Steering - Integrated Starter / Alternator - Distributed Power Architectures and VRMs - Primary Switch for 12V Systems AD FREE I 2010 Fairchild Semiconductor Corporation FDP8441_F085 N-Channel MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 160oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, with = 62oC/W Pulsed Single Pulse Avalanche Energy Power dissipation Derate above 25oC Operating and Storage Temperature Note 1 Ratings 40 ±20 80 23 See Figure 4 947 300 2 -55 to 175 Units V mJ W/oC Thermal Characteristics Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Note 2 oC/W oC/W Package Marking and Ordering Information Device Marking FDP8441 Device FDP8441_F085 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 32V VGS = 0V TJ = 150°C - VGS = ±20V ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance VDS = VGS, ID = 250µA ID = 80A, VGS = 10V ID = 80A, VGS = 10V, TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz - 15000 - 1250 VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V ID = 35A Ig = 1mA 215 280 nC FDP8441_F085 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter |
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