FDP6670AL

FDP6670AL Datasheet


FDP6670AL/FDB6670AL

Part Datasheet
FDP6670AL FDP6670AL FDP6670AL (pdf)
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FDP6670AL/FDB6670AL

May 2003

FDP6670AL/FDB6670AL

N-Channel Logic Level MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS ON and fast switching speed.
• 80 A, 30 V

RDS ON = VGS = 10 V RDS ON = VGS = V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low RDS ON
• 175°C maximum junction temperature rating

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

Note 1

Total Power Dissipation TC = 25°C Derate above 25°C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB6670AL

FDB6670AL
13’’

FDP6670AL

FDP6670AL

Tube

Ratings
30 ± 20 80 240 68 to +175

Tape width 24mm n/a

Units

W/°C
°C/W °C/W

Quantity 800 units
2003 Fairchild Semiconductor Corporation

FDP6670AL/FDB6670AL

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 1

WDSS

Single Pulse Drain-Source Avalanche Energy

VDD = 15 V,

ID = 80 A

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V
More datasheets: S3KB-13 | S3DB-13 | S3AB-13 | S3D-13 | S3B-13 | S3G-13 | S3J-13 | S3K-13 | S3M-13 | S3A-13


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Datasheet ID: FDP6670AL 514254