FDP5645

FDP5645 Datasheet


FDP5645/FDB5645

Part Datasheet
FDP5645 FDP5645 FDP5645 (pdf)
Related Parts Information
FDB5645 FDB5645 FDB5645
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FDP5645/FDB5645

March 2000

FDP5645/FDB5645
60V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• 80 A, 60 V.

RDS ON = VGS = 10 V RDS ON = VGS = 6 V.
• Critical DC electrical parameters specified at elevated temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low R DS ON
• 175°C maximum junction temperature rating.

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

V DSS V GSS ID

TJ, TSTG TL

Parameter

Drain-Source Voltage

Gate-Source Voltage

Maximum Drain Current

Continuous note 3

Pulsed

Total Power Dissipation TC = 25°C

Derate above 25°C

Operating and Storage Junction Temperature Range

Maximum lead termperature for soldering purposes, 1/8“ from case for 5 seconds

FDP5645 FDB5645
60 ±20 80 300 125 -65 to +175 +275

Units

W/°C
°C °C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
°C/W
°C/W
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB5645

FDB5645
13”

FDP5645

FDP5645
note 2

Tape width 24mm

Quantity 800 units
2000 Fairchild Semiconductor Corporation

FDP5645/FDB5645

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 1

WDSS

Single Pulse Drain-Source Avalanche Energy

VDD = 40 V,

Maximum Drain-Source Avalanche

Current

ID = 80 A
800 mJ

Off Characteristics

BV DSS

Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSSF

Leakage, Forward

IGSSR

On Characteristics Note 1

V GS th

Gate Threshold Voltage

GS th
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Datasheet ID: FDP5645 514252