FDB5645
FDB5645 Datasheet
FDP5645/FDB5645
| Part | Datasheet |
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FDB5645 |
FDB5645 (pdf) |
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FDP5645 |
FDP5645 |
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| FDP5645/FDB5645 March 2000 FDP5645/FDB5645 60V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • 80 A, 60 V. RDS ON = VGS = 10 V RDS ON = VGS = 6 V. • Critical DC electrical parameters specified at elevated temperature. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • High performance trench technology for extremely low R DS ON • 175°C maximum junction temperature rating. TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted V DSS V GSS ID TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Continuous note 3 Pulsed Total Power Dissipation TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead termperature for soldering purposes, 1/8“ from case for 5 seconds FDP5645 FDB5645 60 ±20 80 300 125 -65 to +175 +275 Units W/°C °C °C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDB5645 FDB5645 13” FDP5645 FDP5645 note 2 Tape width 24mm Quantity 800 units 2000 Fairchild Semiconductor Corporation FDP5645/FDB5645 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 1 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, Maximum Drain-Source Avalanche Current ID = 80 A 800 mJ Off Characteristics BV DSS Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR On Characteristics Note 1 V GS th Gate Threshold Voltage GS th |
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