FDP5500-F085
FDP5500-F085 Datasheet
FDP5500_F085 N-Channel UltraFET Power MOSFET
| Part | Datasheet |
|---|---|
FDP5500-F085 |
FDP5500-F085 (pdf) |
| Related Parts | Information |
|---|---|
FDP5500 |
FDP5500 |
| PDF Datasheet Preview |
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| FDP5500_F085 N-Channel UltraFET Power MOSFET FDP5500_F085 N-Channel UltraFET Power MOSFET 55V, 80A, - Typ rDS on = at VGS = 10V, ID = 80A - Typ Qg 10 = 114nC at VGS = 10V - Simulation Models -Temperature Compensated PSPICE and SABERTM Models - Peak Current vs Pulse Width Curve - UIS Rating Curve - Qualified to AEC Q101 - RoHS Compliant - DC Linear Mode Control - Solenoid and Motor Control - Switching Regulators - Automotive Systems April 2009 Package DRAIN FLANGE TO-220AB SOURCE DRAIN GATE 2009 Fairchild Semiconductor Corporation FDP5500_F085 N-Channel UltraFET Power MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VDGR VGS Drain to Source Voltage Drain to Gate Voltage RGS = Gate to Source Voltage Drain Current Continuous TC < 135oC, VGS = 10V Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Max. Lead Temp. for Soldering at 1.6mm from case for 10sec Tpkg Max. Package Temp. for Soldering Package Body for 10sec Thermal Characteristics Note 1 Note 1 Note 2 Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-220AB, 1in2 copper pad area Ratings 55 ±20 80 See Figure 4 860 375 -55 to + 175 300 260 Units V A mJ W W/oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDP5500 FDP5500_F085 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250µA, VGS = 0V VDS = 50V, VGS = 0V VDS = 45V TC = 150oC VGS = ±20V VGS th Gate to Source Threshold Voltage VGS = VDS, ID = 250µA rDS on Drain to Source On Resistance ID = 80A, VGS= 10V Dynamic Characteristics Typ Max Units ±100 nA Ciss Coss Crss Qg TOT Qg 10 Qg TH Qgs Qgd VDS = 25V, VGS = 0V, f = 1MHz VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 30V ID = 80A RL = Ig = 1.0mA 3565 1310 207 269 nC 114 148 nC FDP5500_F085 N-Channel UltraFET Power MOSFET Electrical Characteristics TC = 25oC unless otherwise noted |
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