AO4490L
AO4490L Datasheet
AO4490 N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO4490L |
AO4490L (pdf) |
| PDF Datasheet Preview |
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| AO4490 N-Channel Enhancement Mode Field Effect Transistor The AO4490/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS MAX rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical. -RoHS Compliant -AO4490L is Halogen Free VDS V = 30V ID = 16A VGS = 10V RDS ON < VGS = 10V RDS ON < VGS = 4.5V ESD protected UIS Tested! Rg, Ciss,Coss,Crss Tested SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current G Repetitive avalanche energy L=0.3mH G Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 16 13 120 30 135 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t 10s Steady-State 32 62 45 75 Maximum Junction-to-Lead C Steady-State Alpha & Omega Semiconductor, Ltd. Units V A mJ W °C Units °C/W °C/W °C/W AO4490 Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions |
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