FDP040N06

FDP040N06 Datasheet

FDP040N06 N-Channel MOSFET

Part	Datasheet
FDP040N06	FDP040N06 (pdf)

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FDP040N06 N-Channel MOSFET November 2009 FDP040N06 N-Channel MOSFET 60V, 168A, • RDS on = Typ. VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS on • High Power and Current Handling Capability • RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC convertors / Synchronous Rectification TO-220 FDP Series MOSFET Maximum Ratings TC = 25oC unless otherwise noted Parameter Ratings VDSS VGSS IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous TC = 25oC, Silicion Limited -Continuous TC = 100oC, Silicion Limited -Continuous TC = 25oC, Package Limited - Pulsed Note 1 Single Pulsed Avalanche Energy Note 2 Peak Diode Recovery dv/dt Power Dissipation TC = 25oC - Derate above 25oC Note 3 60 ±20 168* 118* 120 672 872 231 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds -55 to +175 300 *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings Units V A mJ V/ns W/oC Units oC/W 2009 Fairchild Semiconductor Corporation Package Marking and Ordering Information Device Marking FDP040N06 Device FDP040N06 Package TO-220 Reel Size Tube Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Parameter Test Conditions Min. Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250µA, VGS = 0V, TC= 25oC ID = 250µA, Referenced to 25oC VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TC = 150oC VGS = ±20V, VDS = 0V On Characteristics VGS th RDS on gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA VGS = 10V, ID = 75A VDS = 10V, ID = 75A Note 4 Dynamic Characteristics Ciss Coss Crss Qg tot Qgs Qgd VDS = 25V, VGS = 0V f = 1MHz VDS = 48V, ID = 75A VGS = 10V Note 4, 5 Switching Characteristics td on tr td off tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 30V, ID = 75A VGS = 10V, RGEN = Note 4, 5 Drain-Source Diode Characteristics

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FDP040N06 N-Channel MOSFET

November 2009

FDP040N06

N-Channel MOSFET
60V, 168A,
• RDS on = Typ. VGS = 10V, ID = 75A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS on
• High Power and Current Handling Capability
• RoHS Compliant

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Application
• DC to DC convertors / Synchronous Rectification

TO-220 FDP Series

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Parameter

Ratings

VDSS VGSS

IDM EAS dv/dt

Drain to Source Voltage

Gate to Source Voltage Drain Current Drain Current
-Continuous TC = 25oC, Silicion Limited -Continuous TC = 100oC, Silicion Limited -Continuous TC = 25oC, Package Limited
- Pulsed

Note 1

Single Pulsed Avalanche Energy

Note 2

Peak Diode Recovery dv/dt Power Dissipation

TC = 25oC - Derate above 25oC

Note 3
60 ±20 168* 118* 120 672 872 231

TJ, TSTG TL

Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds
-55 to +175 300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Ratings

Units V

A mJ V/ns W/oC

Units oC/W
2009 Fairchild Semiconductor Corporation
Package Marking and Ordering Information

Device Marking FDP040N06

Device FDP040N06

Package TO-220

Reel Size Tube

Tape Width -

Quantity 50

Electrical Characteristics TC = 25oC unless otherwise noted

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Body Leakage Current

ID = 250µA, VGS = 0V, TC= 25oC

ID = 250µA, Referenced to 25oC

VDS = 60V, VGS = 0V

VDS = 60V, VGS = 0V, TC = 150oC

VGS = ±20V, VDS = 0V

On Characteristics

VGS th RDS on gFS

Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance

VGS = VDS, ID = 250µA VGS = 10V, ID = 75A VDS = 10V, ID = 75A

Note 4

Dynamic Characteristics

Ciss Coss Crss Qg tot Qgs Qgd

VDS = 25V, VGS = 0V f = 1MHz

VDS = 48V, ID = 75A

VGS = 10V

Note 4, 5

Switching Characteristics
td on tr td off tf

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

VDD = 30V, ID = 75A

VGS = 10V, RGEN =

Note 4, 5

Drain-Source Diode Characteristics

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Datasheet ID: FDP040N06 514242