FDMS2504SDC

FDMS2504SDC Datasheet


FDMS2504SDC N-Channel Dual CoolTM SyncFETTM

Part Datasheet
FDMS2504SDC FDMS2504SDC FDMS2504SDC (pdf)
PDF Datasheet Preview
FDMS2504SDC N-Channel Dual CoolTM SyncFETTM

FDMS2504SDC

N-Channel Dual CoolTM SyncFETTM
25 V, 49 A, mΩ

July 2013
- Dual CoolTM Top Side Cooling PQFN package
- Max rDS on = mΩ at VGS = 10 V, ID = 32 A - Max rDS on = mΩ at VGS = V, ID = 28 A - High performance technology for extremely low rDS on - SyncFET Schottky Body Diode - RoHS Compliant

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS on while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
- Synchronous Rectifier for DC/DC Converters
- Telecom Secondary Side Rectification
- High End Server/Workstation Vcore Low Side

Pin 1

D5 D6
4G 3S

Power 56

Bottom

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

EAS dv/dt PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current
-Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

D7 D8

Note 4 Note 1a

Note 3 Note 5 Note 1a
2S 1S

Ratings 25 ±20 49 235 42 200 288 104
-55 to +150

Units V
mJ V/ns
Package Marking and Ordering Information

Top Source

Bottom Drain

Note 1a

Note 1b

Note 1i

Note 1j

Note 1k
°C/W

Device Marking

Device
2504S

FDMS2504SDC

Package Dual CoolTM Power 56

Reel Size 13’’

Tape Width 12 mm

Quantity 3000 units

FDMS2504SDC N-Channel Dual CoolTM SyncFETTM

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 1 mA, VGS = 0 V

Breakdown Voltage Temperature Coefficient

ID = 10 mA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 1 mA

ID = 10 mA, referenced to 25 °C
More datasheets: MW1212-760-NC-WH | MW1212-760-NC-BK | MW1224-760-NC-BK | CX2016DB27000H0FLFC1 | B39438X6964M100S1 | AT29C040A-10PC | AT29C040A-10PI | AT29C040A-10TI | AT29C040A-10TC | PJ-002A-SMT-1


Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDMS2504SDC Datasheet file may be downloaded here without warranties.

Datasheet ID: FDMS2504SDC 514213