FDMJ1023PZ

FDMJ1023PZ Datasheet

FDMJ1023PZ Dual P-Channel MOSFET

Part	Datasheet
FDMJ1023PZ	FDMJ1023PZ (pdf)

PDF Datasheet Preview
FDMJ1023PZ Dual P-Channel MOSFET August 2007 FDMJ1023PZ Dual P-Channel MOSFET - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Low gate charge, high power and current handling capability - HBM ESD protection level > 1.5kV typical Note 3 - RoHS Compliant This dual P-Channel MOSFET uses Fairchild’s advanced low voltage process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. - Battery management/charger application Pin 1 S1 S2 G2 Bottom Drain Contact S2 4 S1 5 G1 S1 S2 SC-75 MicroFET Bottom Drain Contact MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings ±8 to +150 Units V A W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Note 1b Device Marking 023 Device FDMJ1023PZ Package SC-75 MicroFET Reel Size 7’’ Tape Width 8mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDMJ1023PZ Dual P-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = VGS = 0V ID = referenced to 25°C VDS = VGS = 0V VGS = ±8V, VDS = 0V mV/°C ±10 On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = ID = referenced to 25°C VGS = ID = VGS = ID = VGS = ID = VGS = ID = VGS = ID = ,TJ = 125°C VDD = ID = mV/°C 128 160 173 210 217 300 130 160 Dynamic Characteristics

PDF Datasheet Preview

FDMJ1023PZ Dual P-Channel MOSFET

August 2007

FDMJ1023PZ

Dual P-Channel MOSFET
- Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Low gate charge, high power and current handling capability - HBM ESD protection level > 1.5kV typical Note 3 - RoHS Compliant

This dual P-Channel MOSFET uses Fairchild’s advanced low voltage process. This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The SC-75 MicroFET package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
- Battery management/charger application

Pin 1

S1 S2 G2

Bottom Drain Contact

S2 4 S1 5

G1 S1 S2 SC-75 MicroFET

Bottom Drain Contact

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings ±8
to +150

Units V A

W °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Note 1b

Device Marking 023

Device FDMJ1023PZ

Package SC-75 MicroFET

Reel Size 7’’

Tape Width 8mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDMJ1023PZ Dual P-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = VGS = 0V ID = referenced to 25°C

VDS = VGS = 0V VGS = ±8V, VDS = 0V
mV/°C
±10

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID =

ID = referenced to 25°C

VGS = ID = VGS = ID = VGS = ID = VGS = ID = VGS = ID = ,TJ = 125°C VDD = ID =
mV/°C
128 160
173 210
217 300
130 160

Dynamic Characteristics

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDMJ1023PZ Datasheet file may be downloaded here without warranties.

Datasheet ID: FDMJ1023PZ 514208