FDMC8676

FDMC8676 Datasheet

FDMC8676 N-Channel MOSFET

Part	Datasheet
FDMC8676	FDMC8676 (pdf)

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FDMC8676 N-Channel MOSFET December 2007 FDMC8676 tm N-Channel MOSFET 30V, 18A, - Max rDS on = at VGS = 10V, ID = 14.7A - Max rDS on = at VGS = 4.5V, ID = 11.5A - Low Profile - 1mm max in Power 33 - RoHS Compliant This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS on has been maintained to provide an extremely versatile device. - High efficiency DC-DC converter - Notebook DC-DC conversion - Multi purpose point of load Bottom Top Pin 1 Power 33 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TC = 25°C TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 3 Ratings 30 ±20 18 66 16 60 41 216 -55 to +150 Units V W mJ °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Device Marking FDMC8676 Device FDMC8676 Package Power 33 Reel Size 13’’ Tape Width 12mm Quantity 3000units 2007 Fairchild Semiconductor Corporation FDMC8676 N-Channel MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V ID = 250µA, referenced to 25°C mV/°C VDS = 24V, VGS = 0V TJ = 125°C VGS = ±20V, VDS = 0V 1 µA 100 ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250µA ID = 250µA, referenced to 25°C

PDF Datasheet Preview

FDMC8676 N-Channel MOSFET

December 2007

FDMC8676 tm

N-Channel MOSFET
30V, 18A,
- Max rDS on = at VGS = 10V, ID = 14.7A - Max rDS on = at VGS = 4.5V, ID = 11.5A - Low Profile - 1mm max in Power 33 - RoHS Compliant

This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS on has been maintained to provide an extremely versatile device.
- High efficiency DC-DC converter
- Notebook DC-DC conversion
- Multi purpose point of load

Bottom

Top Pin 1

Power 33

D5 D6 D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS

PD EAS TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25°C TC = 25°C TA = 25°C

Power Dissipation Power Dissipation Single Pulse Avalanche Energy

TC = 25°C TA = 25°C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 3

Ratings 30 ±20 18 66 16 60 41 216
-55 to +150

Units V

W mJ °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a
°C/W

Device Marking FDMC8676

Device FDMC8676

Package Power 33

Reel Size 13’’

Tape Width 12mm

Quantity 3000units
2007 Fairchild Semiconductor Corporation

FDMC8676 N-Channel MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

ID = 250µA, referenced to 25°C
mV/°C

VDS = 24V,

VGS = 0V

TJ = 125°C

VGS = ±20V, VDS = 0V
1 µA
100 ±100 nA

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250µA

ID = 250µA, referenced to 25°C

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Datasheet ID: FDMC8676 514201