FDMB668P

FDMB668P Datasheet

FDMB668P P-Channel 1.8V Logic Level MOSFET

Part	Datasheet
FDMB668P	FDMB668P (pdf)

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FDMB668P P-Channel 1.8V Logic Level MOSFET February 2007 FDMB668P tm P-Channel 1.8V Logic Level MOSFET -20V, -6.1A, - Max rDS on = at VGS = -4.5V, ID = -6.1A - Max rDS on = at VGS = -2.5V, ID = -5.1A - Max rDS on = at VGS = -1.8V, ID = -4.3A - Excellent for portable application at VGS = -1.8V - Thin profile - Maximum height = 0.8mm - RoHS compliant FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution. - Load Switch in: -HDD -Portable Gaming, MP3 -Notebook - DC/DC Conversion PIN 1 GATE SOURCE MicroFET 3X1.9 D1 D2 D3 G4 8D 7D 6D 5S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings -20 ±8 -40 -55 to +150 Units V A W °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking 668 Device FDMB668P Package MicroFET 3X1.9 Reel Size 7” Tape Width 8mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDMB668P P-Channel 1.8V Logic Level MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C mV/°C VGS = -4.5V, ID = -6.1A VGS = -2.5V, ID = -5.1A VGS = -1.8V, ID = -4.3A VGS = -4.5V, ID = -6.1A,TJ = 125°C VDS = -4.5V, ID = -6.1A Dynamic Characteristics Ciss Coss Crss VDS = -10V, VGS = 0V, f = 1MHz 1565 2085 pF Switching Characteristics

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FDMB668P P-Channel 1.8V Logic Level MOSFET

February 2007

FDMB668P tm

P-Channel 1.8V Logic Level MOSFET
-20V, -6.1A,
- Max rDS on = at VGS = -4.5V, ID = -6.1A - Max rDS on = at VGS = -2.5V, ID = -5.1A - Max rDS on = at VGS = -1.8V, ID = -4.3A - Excellent for portable application at VGS = -1.8V - Thin profile - Maximum height = 0.8mm
- RoHS compliant

FDMB668P is excellent for load switch and DC-DC conversion among portable electronics. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution.
- Load Switch in:
-HDD -Portable Gaming, MP3 -Notebook
- DC/DC Conversion

PIN 1

GATE

SOURCE MicroFET 3X1.9

D1 D2 D3 G4
8D 7D 6D 5S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings -20 ±8 -40
-55 to +150

Units V A

W °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b
°C/W

Device Marking 668

Device FDMB668P

Package MicroFET 3X1.9

Reel Size 7”

Tape Width 8mm

Quantity 3000 units
2007 Fairchild Semiconductor Corporation

FDMB668P P-Channel 1.8V Logic Level MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C

VDS = -16V, VGS = 0V VGS = ±8V, VDS = 0V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = -250µA

ID = -250µA, referenced to 25°C
mV/°C

VGS = -4.5V, ID = -6.1A VGS = -2.5V, ID = -5.1A VGS = -1.8V, ID = -4.3A VGS = -4.5V, ID = -6.1A,TJ = 125°C VDS = -4.5V, ID = -6.1A

Dynamic Characteristics

Ciss Coss Crss

VDS = -10V, VGS = 0V, f = 1MHz
1565 2085 pF

Switching Characteristics

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Datasheet ID: FDMB668P 514197