FDMA1027PT

FDMA1027PT Datasheet

FDMA1027PT Dual P-Channel MOSFET

Part	Datasheet
FDMA1027PT	FDMA1027PT (pdf)

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FDMA1027PT Dual P-Channel MOSFET FDMA1027PT Dual P-Channel MOSFET May 2009 V, A, 120 m Features - Max rDS on = 120 m at VGS = V, ID = A - Max rDS on = 160 m at VGS = V, ID = A - Max rDS on = 240 m at VGS = V, ID = A - Low profile - mm maximum - in the new package MicroFET 2x2 Thin - RoHS Compliant - Free from halogenated compounds and antimony oxides This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. - Battery management - Load switch - Battery protection PIN 1 S1 G1 D2 S1 1 G1 2 6 D1 5 G2 D1 G2 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Power Dissipation for Single Operation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings -20 ±8 -3 -6 -55 to +150 Units V A W °C RTJA Thermal Resistance, Junction to Ambient Single Operation Note 1a RTJA Package Marking and Ordering Information °C/W Device Marking 27 Device FDMA1027PT Package MicroFET 2x2 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units 2009 Fairchild Semiconductor Corporation FDMA1027PT Dual P-Channel MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS 'BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 PA, VGS = 0 V ID = -250 PA, referenced to 25 °C VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance ID on gFS On to State Drain Current Forward Transconductance VGS = VDS, ID = -250 PA ID = -250 PA, referenced to 25 °C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A , TJ = 125 °C VGS = V, VDS = -5 V VDS = -5 V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = -10 V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge

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FDMA1027PT Dual P-Channel MOSFET

FDMA1027PT

Dual P-Channel MOSFET

May 2009

V, A, 120 m Features
- Max rDS on = 120 m at VGS = V, ID = A - Max rDS on = 160 m at VGS = V, ID = A - Max rDS on = 240 m at VGS = V, ID = A - Low profile - mm maximum - in the new package

MicroFET 2x2 Thin
- RoHS Compliant
- Free from halogenated compounds and antimony oxides

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.

The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
- Battery management - Load switch - Battery protection

PIN 1 S1 G1 D2

S1 1 G1 2
6 D1 5 G2

D1 G2 S2

MicroFET 2X2 Thin

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous -Pulsed

TA = 25 °C

Power Dissipation for Single Operation

TA = 25 °C

Power Dissipation for Single Operation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings -20 ±8 -3 -6
-55 to +150

Units V A

W °C

RTJA

Thermal Resistance, Junction to Ambient Single Operation

Note 1a

RTJA
Package Marking and Ordering Information
°C/W

Device Marking 27

Device FDMA1027PT

Package MicroFET 2x2 Thin

Reel Size 7 ’’

Tape Width 8 mm

Quantity 3000 units
2009 Fairchild Semiconductor Corporation

FDMA1027PT Dual P-Channel MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS 'BVDSS IDSS IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250 PA, VGS = 0 V

ID = -250 PA, referenced to 25 °C

VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On Resistance

ID on gFS

On to State Drain Current Forward Transconductance

VGS = VDS, ID = -250 PA

ID = -250 PA, referenced to 25 °C

VGS = V, ID = A

VGS = V, ID = A

VGS = V, ID = A

VGS = V, ID = A , TJ = 125 °C

VGS = V, VDS = -5 V

VDS = -5 V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge

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Datasheet ID: FDMA1027PT 514195