FDM6296

FDM6296 Datasheet

FDM6296 Single N-Channel Logic-Level MOSFET

Part	Datasheet
FDM6296	FDM6296 (pdf)

PDF Datasheet Preview
FDM6296 Single N-Channel Logic-Level MOSFET January 2007 FDM6296 Single N-Channel Logic-Level MOSFET tm 30V,11.5A, 10.5mΩ - Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A - Max rDS on = 15mΩ at VGS = 4.5V, ID = 10A - Low Qg, Qgd and Rg for efficient switching performance - RoHS Compliant This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS on and gate charge this device can be effectively used as a “high side” control switch or “low side” synchronous rectifier. Application - Point of Load Converter - 1/16 Brick Synchronous Rectifier Bottom 8 Top D 21 43 Power 33 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Ratings 30 ±20 40 -55 to +150 Units V A W °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1 Note 1a °C/W Device Marking 6296 Device FDM6296 Package Power 33 Reel Size 7’’ Tape Width 8mm Quantity 3000 units 2006 Fairchild Semiconductor Corporation FDM6296 Single N-Channel Logic-Level MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250uA, VGS = 0V ID = 250uA, referenced to 25°C VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250uA ID = 250uA, referenced to 25°C VGS = 10V, ID = 11.5A VGS = 4.5V, ID = 10A VGS = 10V, ID = 11.5A , TJ = 125°C VDS = 5V, ID = 11.5A Dynamic Characteristics Ciss Coss Crss Rg VDS = 15V, VGS = 0V, f = 1MHz VDS = 15mV, f = 1MHz Switching Characteristics td on tr td off tf Qg Qgs Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain “Miller” Charge

PDF Datasheet Preview

FDM6296 Single N-Channel Logic-Level MOSFET

January 2007

FDM6296 Single N-Channel Logic-Level MOSFET tm
30V,11.5A, 10.5mΩ
- Max rDS on = 10.5mΩ at VGS = 10V, ID = 11.5A - Max rDS on = 15mΩ at VGS = 4.5V, ID = 10A - Low Qg, Qgd and Rg for efficient switching performance - RoHS Compliant

This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS on and gate charge this device can be effectively used as a “high side” control switch or “low side” synchronous rectifier.

Application
- Point of Load Converter - 1/16 Brick Synchronous Rectifier

Bottom 8

Top D
21 43

Power 33

D5 D6 D7 D8
4G 3S 2S 1S

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

PD TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 1b

Ratings 30 ±20 40
-55 to +150

Units V A

W °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1

Note 1a
°C/W

Device Marking 6296

Device FDM6296

Package Power 33

Reel Size 7’’

Tape Width 8mm

Quantity 3000 units
2006 Fairchild Semiconductor Corporation

FDM6296 Single N-Channel Logic-Level MOSFET

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = 250uA, VGS = 0V

ID = 250uA, referenced to 25°C

VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250uA

ID = 250uA, referenced to 25°C

VGS = 10V, ID = 11.5A VGS = 4.5V, ID = 10A VGS = 10V, ID = 11.5A , TJ = 125°C VDS = 5V, ID = 11.5A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = 15V, VGS = 0V, f = 1MHz

VDS = 15mV, f = 1MHz

Switching Characteristics
td on tr td off tf Qg Qgs

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 5V Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDM6296 Datasheet file may be downloaded here without warranties.

Datasheet ID: FDM6296 514192