FDJ1032C

FDJ1032C Datasheet

FDJ1032C Complementary MOSFET

Part	Datasheet
FDJ1032C	FDJ1032C (pdf)

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FDJ1032C Complementary MOSFET FDJ1032C Complementary MOSFET June 2008 • Q1 A, V. • Q2 A, 20 V. • Low gate charge RDS ON = 160 VGS = V RDS ON = 230 VGS = V RDS ON = 390 VGS = V RDS ON = 90 VGS = V RDS ON = 130 VGS = V • High performance trench technology for extremely low RDS ON • FLMP SC75 package Enhanced thermal performance in industry-standard package size • RoHS Compliant These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Motor Driving S2 S1 G1 G2 S2 S1 Bottom Drain Contact Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1a ±12 to +150 Units °C/W 2008 Fairchild Semiconductor Corporation FDJ1032C Complementary MOSFET Package Marking and Ordering Information Device Marking Device FDJ1032C Reel Size Tape width Quantity 3000 units Electrical Characteristics Parameter Test Conditions Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = µA VGS = 0 V, ID = 250 µA Breakdown Voltage Temperature ID = µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = V, VGS = 0 V VDS = 16 V, VGS = 0 V IGSS Gate-Body Leakage VGS = ±8 V, VDS = 0 V VGS = ±12 V, VDS = 0 V On Characteristics Note 2 VGS th RDS on Gate Threshold Voltage Gate Threshold Voltage Temperature Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VDS = VGS, ID = µA VDS = VGS, ID = 250 µA ID = µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID =2.8A, TJ = 125°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = TJ = 125°C VDS = V, ID = A VDS = 5 V, ID = A Ciss Coss Crss Q1 VDS = V, VGS = 0 V, f = MHz Q2 VDS = 10 V, VGS = 0 V, f = MHz Gate Resistance VGS = Switching Characteristics td on

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FDJ1032C Complementary MOSFET

FDJ1032C Complementary MOSFET

June 2008
• Q1 A, V.
• Q2 A, 20 V.
• Low gate charge

RDS ON = 160 VGS = V RDS ON = 230 VGS = V RDS ON = 390 VGS = V

RDS ON = 90 VGS = V RDS ON = 130 VGS = V
• High performance trench technology for extremely low RDS ON
• FLMP SC75 package Enhanced thermal performance in industry-standard package size
• RoHS Compliant

These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• DC/DC converter
• Load switch
• Motor Driving

S2 S1 G1

G2 S2 S1

Bottom Drain Contact

Bottom Drain Contact

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Parameter

VDSS VGSS ID

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

Note 1a Note 1a
±12
to +150

Units
°C/W
2008 Fairchild Semiconductor Corporation

FDJ1032C Complementary MOSFET
Package Marking and Ordering Information

Device Marking

Device

FDJ1032C

Reel Size

Tape width

Quantity
3000 units

Electrical Characteristics

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = µA VGS = 0 V, ID = 250 µA

Breakdown Voltage Temperature ID = µA, Referenced to 25°C

ID = 250 µA, Referenced to 25°C

IDSS

Zero Gate Voltage Drain Current VDS = V, VGS = 0 V VDS = 16 V, VGS = 0 V

IGSS

Gate-Body Leakage

VGS = ±8 V, VDS = 0 V VGS = ±12 V, VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

Gate Threshold Voltage

Gate Threshold Voltage Temperature Static Drain-Source On-Resistance

Forward Transconductance

Dynamic Characteristics

VDS = VGS, ID = µA VDS = VGS, ID = 250 µA

ID = µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID =2.8A, TJ = 125°C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = TJ = 125°C

VDS = V, ID = A VDS = 5 V, ID = A

Ciss Coss Crss

Q1 VDS = V, VGS = 0 V, f = MHz

Q2 VDS = 10 V, VGS = 0 V, f = MHz

Gate Resistance

VGS =

Switching Characteristics
td on

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Datasheet ID: FDJ1032C 514185