FDP15N50
FDP15N50 Datasheet
FDH15N50 / FDP15N50 / FDB15N50
| Part | Datasheet |
|---|---|
FDP15N50 |
FDP15N50 (pdf) |
| Related Parts | Information |
|---|---|
FDH15N50 |
FDH15N50 |
| PDF Datasheet Preview |
|---|
| FDH15N50 / FDP15N50 / FDB15N50 August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, Ohm, N-Channel SMPS Power MOSFET Switch Mode Power Supplies SMPS , such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced rDS ON • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature Package SOURCE DRAIN GATE GATE SOURCE DRAIN FLANGE DRAIN FLANGE DRAIN BOTTOM TO-247 FDH SERIES TO-263AB FDB SERIES SOURCE DRAIN GATE TO-220AB FDP SERIES Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 10V Pulsed1 Ratings 500 ±30 15 11 60 Power dissipation Derate above 25oC 300 2 TJ, TSTG Operating and Storage Temperature Soldering Temperature for 10 seconds -55 to 175 300 1.6mm from case Units V A W/oC Thermal Characteristics Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-247 Thermal Resistance Junction to Ambient TO-220, TO-263 Package Marking and Ordering Information Device Marking FDH15N50 FDP15N50 FDB15N50 Device FDH15N50 FDP15N50 FDB15N50 Package TO-247 TO-220 TO-263 Reel Size Tube 330mm Tape Width - 24mm Quantity 30 50 800 Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Statics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temp. Coefficient rDS ON VGS th Drain to Source On-Resistance Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V Reference to 25oC, ID = 1mA VGS = 10V, ID = 7.5A VDS = VGS, ID = 250µA VDS = 500V TC = 25oC VGS = 0V TC = 150oC - VGS = ±30V Dynamics Forward Transconductance VDD = 10V, ID = 7.5A Qg TOT Total Gate Charge at 10V VGS = 10V, Gate to Source Gate Charge VDS = 400V, Gate to Drain “Miller” Charge ID = 15A td ON Turn-On Delay Time VDD = 250V, Rise Time ID = 15A, |
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