FDFS6N303
FDFS6N303 Datasheet
FDFS6N303 N-Channel MOSFET with Schottky Diode
| Part | Datasheet |
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FDFS6N303 |
FDFS6N303 (pdf) |
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| October 2003 FDFS6N303 N-Channel MOSFET with Schottky Diode The FDFS6N303 incorporates a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and Schottky diode are isolated inside the package. The general purpose pinout has been chosen to maximize flexibility and ease of use. This product is particularly suited for switching applications such as DC/DC buck, boost, synchronous, and non-synchronous converters where the MOSFET is driven as low as 4.5V and fast switching, high efficiency and small PCB footprint is desirable. 6 A, 30 V. RDS ON = VGS = 10 V. RDS ON = VGS = V. VF < V A VF < V 3 A VF < V 6 A. Schottky and MOSFET incorporated into single power surface mount SO-8 package. General purpose pinout for design flexibility. Ideal for DC/DC converter applications. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 FD6NF3S03 SO-8 pin 1 A1 A2 S3 G4 MOSFET Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage Drain Current - Continuous - Pulsed Note 1a Power Dissipation for Dual Operation Power Dissipation for Single Operation Note 1a Note 1c TJ,TSTG Operating and Storage Temperature Range Schottky Diode Maximum Ratings VRRM Average Forward Current TA = 25oC unless otherwise noted Note 1a FDFS6N303 30 ±20 6 30 2 -55 to 150 8C 7C 6D 5D Units V A 2003 Fairchild Semiconductor Corporation |
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