FDFS2P753AZ

FDFS2P753AZ Datasheet

FDFS2P753AZ Integrated P-Channel MOSFET and Schottky Diode

Part	Datasheet
FDFS2P753AZ	FDFS2P753AZ (pdf)

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FDFS2P753AZ Integrated P-Channel MOSFET and Schottky Diode April 2008 FDFS2P753AZ tm Integrated P-Channel MOSFET and Schottky Diode -30V, -3A, - Max rDS on = at VGS = -10V, ID = -3.0A - Max rDS on = at VGS = -4.5V, ID = -1.5A - VF < 0.45V 2A VF < 0.28V 100mA - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - RoHS Compliant The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench MOSFET with a Schottky diode in an SO-8 package. The MOSFET features a low on-state resistance and an optimized gate charge to achieve fast switching. The independently connected Schottky diode has a low forward voltage drop to minimize power loss. This device is an Ideal DC-DC solution for up to 3A peak load current. - DC - DC Conversion Pin 1 SO-8 D5 D6 C7 C8 4G 3S 2A 1A MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Single Pulse Avalanche Energy TC = 25°C TA = 25°C Schottky Average Forward Current Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 2 Ratings -30 ±25 -3 -16 6 30 2 -55 to +150 Units V mJ V A °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1 Note 1a °C/W Device Marking FDFS2P753AZ Device FDFS2P753AZ Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500units 2008 Fairchild Semiconductor Corporation FDFS2P753AZ Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C mV/°C VDS = -24V, VGS = 0V TJ = 125°C VGS = ±25V, VDS = 0V -1 µA -100 ±10 On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance

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FDFS2P753AZ Integrated P-Channel MOSFET and Schottky Diode

April 2008

FDFS2P753AZ tm

Integrated P-Channel MOSFET and Schottky Diode
-30V, -3A,
- Max rDS on = at VGS = -10V, ID = -3.0A - Max rDS on = at VGS = -4.5V, ID = -1.5A - VF < 0.45V 2A

VF < 0.28V 100mA
- Schottky and MOSFET incorporated into single power surface mount SO-8 package
- Electrically independent Schottky and MOSFET pinout for design flexibility
- RoHS Compliant

The FDFS2P753AZ offers a single package solution for DC/DC conversion. It combines an excellent Fairchild’s PowerTrench MOSFET with a Schottky diode in an SO-8 package. The MOSFET features a low on-state resistance and an optimized gate charge to achieve fast switching. The independently connected Schottky diode has a low forward voltage drop to minimize power loss. This device is an Ideal DC-DC solution for up to 3A peak load current.
- DC - DC Conversion

Pin 1

SO-8

D5 D6 C7 C8
4G 3S 2A 1A

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

EAS VRRM IO TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous
-Pulsed

Power Dissipation Power Dissipation Single Pulse Avalanche Energy

TC = 25°C TA = 25°C

Schottky Average Forward Current

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a

Note 1a Note 2

Ratings -30 ±25 -3 -16 6 30 2
-55 to +150

Units V
mJ V A °C

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1

Note 1a
°C/W

Device Marking FDFS2P753AZ

Device FDFS2P753AZ

Package SO-8

Reel Size 330mm

Tape Width 12mm

Quantity 2500units
2008 Fairchild Semiconductor Corporation

FDFS2P753AZ Integrated P-Channel MOSFET and Schottky Diode

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = -250µA, VGS = 0V

ID = -250µA, referenced to 25°C
mV/°C

VDS = -24V,

VGS = 0V

TJ = 125°C

VGS = ±25V, VDS = 0V
-1 µA
-100
±10

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

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Datasheet ID: FDFS2P753AZ 514163