FDFMJ2P023Z
FDFMJ2P023Z Datasheet
FDFMJ2P023Z Integrated P-Channel MOSFET and Schottky Diode
| Part | Datasheet |
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FDFMJ2P023Z |
FDFMJ2P023Z (pdf) |
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| FDFMJ2P023Z Integrated P-Channel MOSFET and Schottky Diode August 2007 FDFMJ2P023Z Integrated P-Channel MOSFET and Schottky Diode tm MOSFET - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Max rDS on = at VGS = ID = - Low gate charge, high power and current handline capability This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The SC-75 MicroFET package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. - HBM ESD protection level > 1.5KV typical Note 3 Schottky - VF < 400mV 100mA - RoHS Compliant Pin 1 TO BOTTOM NC A S SC-75 MicroFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Thermal Characteristics 4S TO BOTTOM Note 1a Note 1a Note 1b Ratings ±8 to +150 30 1 Units V °C V A Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a °C/W Note 1b Device Marking .P23 Device FDFMJ2P023Z Package SC-75 MicroFET Reel Size 7’’ Tape Width 8 mm Quantity 3000 units 2007 Fairchild Semiconductor Corporation FDFMJ2P023Z Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = VGS = 0V ID = referenced to 25°C VDS = VGS = 0V VGS = ±8V, VDS = 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = ID = referenced to 25°C VGS = ID = VGS = ID = VGS = ID = VGS = ID = VGS = ID = ,TJ = 125°C VDS = ID = Dynamic Characteristics Ciss Coss Crss VDS = VGS = 0V, f = 1MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge VDD = ID = VGS = RGEN = VDD = ID = VGS = |
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