FDFME2P823ZT

FDFME2P823ZT Datasheet

FDFME2P823ZT Integrated P-Channel MOSFET and Schottky Diode

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FDFME2P823ZT	FDFME2P823ZT (pdf)

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Is Now Part of To learn more about ON Semiconductor, please visit our website at ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDFME2P823ZT Integrated P-Channel MOSFET and Schottky Diode FDFME2P823ZT July 2010 Integrated P-Channel MOSFET and Schottky Diode -20 V, A, 142 mΩ - Max rDS on = 142 mΩ at VGS = V, ID = A - Max rDS on = 213 mΩ at VGS = V, ID = A - Max rDS on = 331 mΩ at VGS = V, ID = A - Max rDS on = 530 mΩ at VGS = V, ID = A - Low profile mm maximum in the new package MicroFET 1.6x1.6 Thin - Schottky VF < V 1A - Free from halogenated compounds and antimony oxides - HBM ESD protection level > 1600 V Note 3 - RoHS Compliant This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications. - Battery Charging - DC-DC Conversion Pin 1 D NC A A1 NC 2 6K 5G 4S BOTTOM MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS VRRM IO TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25 °C TA = 25 °C TA = 25 °C Schottky Average Forward Current Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 1a Note 1b Note 4 Ratings -20 ±8 -6 28 1 -55 to +150 Units V V A °C Thermal Resistance, Junction to Ambient Single Operation Note 1a Package Marking and Ordering Information °C/W Device Marking 3T Device FDFME2P823ZT Package MicroFET 1.6x1.6 Thin Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units FDFME2P823ZT Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 uA, VGS = 0 V ID = -250 uA, referenced to 25 °C mV/°C VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V ±10 On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250 uA ID = -250 uA, referenced to 25 °C mV/°C VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ = 125 °C VDS = V, ID = A Dynamic Characteristics Ciss Coss Crss VDS = -10 V, VGS = 0 V, f = 1 MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = -10 V, ID = -1 A, VGS = V, RGEN = 6 Ω PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: Semiconductor Components Industries, LLC N. American Technical Support 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support Phone 421 33 790 2910 Japan Customer Focus Center Phone 81−3−5817−1050 ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FDFME2P823ZT Integrated P-Channel MOSFET and Schottky Diode

FDFME2P823ZT

July 2010

Integrated P-Channel MOSFET and Schottky Diode -20 V, A, 142 mΩ
- Max rDS on = 142 mΩ at VGS = V, ID = A - Max rDS on = 213 mΩ at VGS = V, ID = A - Max rDS on = 331 mΩ at VGS = V, ID = A - Max rDS on = 530 mΩ at VGS = V, ID = A - Low profile mm maximum in the new package

MicroFET 1.6x1.6 Thin
- Schottky VF < V 1A - Free from halogenated compounds and antimony oxides
- HBM ESD protection level > 1600 V Note 3
- RoHS Compliant

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses.

The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
- Battery Charging - DC-DC Conversion

Pin 1

D NC A

A1 NC 2
6K 5G 4S

BOTTOM

MicroFET 1.6x1.6 Thin

MOSFET Maximum Ratings TA = 25 °C unless otherwise noted

Symbol VDS VGS

VRRM IO TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous -Pulsed

TA = 25 °C

TA = 25 °C TA = 25 °C

Schottky Average Forward Current

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 1a Note 1b

Note 4

Ratings -20 ±8 -6 28 1
-55 to +150

Units V

V A °C

Thermal Resistance, Junction to Ambient Single Operation

Note 1a
Package Marking and Ordering Information
°C/W

Device Marking 3T

Device FDFME2P823ZT

Package MicroFET 1.6x1.6 Thin

Reel Size 7 ’’

Tape Width 8 mm

Quantity 5000 units

FDFME2P823ZT Integrated P-Channel MOSFET and Schottky Diode

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250 uA, VGS = 0 V

ID = -250 uA, referenced to 25 °C
mV/°C

VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V
±10

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = -250 uA

ID = -250 uA, referenced to 25 °C
mV/°C

VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A VGS = V, ID = A, TJ = 125 °C VDS = V, ID = A

Dynamic Characteristics

Ciss Coss Crss

VDS = -10 V, VGS = 0 V, f = 1 MHz

Switching Characteristics
td on tr td off tf Qg Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge

VDD = -10 V, ID = -1 A, VGS = V, RGEN = 6 Ω
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email:

Semiconductor Components Industries, LLC

N. American Technical Support 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support Phone 421 33 790 2910

Japan Customer Focus Center Phone 81−3−5817−1050

ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDFME2P823ZT Datasheet file may be downloaded here without warranties.

Datasheet ID: FDFME2P823ZT 514156