FDFC2P100

FDFC2P100 Datasheet

FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode

Part	Datasheet
FDFC2P100	FDFC2P100 (pdf)

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FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode October 2006 FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode -20V, -3A, - Max rDS on = at VGS = -4.5V, ID = -3.0A - Max rDS on = at VGS = -2.5V, ID = -2.2A - Low Gate Charge 3.4nC typ - Compact industry standard SuperSOTTM-6 package Schottky: - VF < V at IF = 1A - RoHS Compliant The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin. PIN 1 SuperSOTTM-6 C/D 4 C/D 5 C/D 6 3G 2S 1A MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Parameter VRRM IO TJ, TSTG Thermal Characteristics Note 1a Note 1a Note 1b Note 1a Ratings -20 ±12 -3 -6 20 1 -55 to +150 Units V W V A °C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Package Marking and Ordering Information Note 1a Note 1b °C/W Device Marking Device FDFC2P100 Package SSOT-6 Reel Size 7” Tape Width 8mm Quantity 3000units 2006 Fairchild Semiconductor Corporation FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250µA, VGS = 0V ID = -250µA, referenced to 25°C VGS = 0V, VDS = -16V VGS = ±12V, VDS = 0V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Drain to Source On-Resistance Forward Transconductance VGS = VDS, ID = -250µA ID = -250µA, referenced to 25°C VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.2A VGS = -4.5V, ID = -3.0A, TJ = 125°C VDS = -5V, ID = -3.0A Dynamic Characteristics Ciss Coss Crss Rg VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz Switching Characteristics td on tr td off tf Qg TOT Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at -10V Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = -10V, ID = -3.0A VGS = -4.5V, RGEN =

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FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode

October 2006

FDFC2P100

Integrated P-Channel MOSFET and Schottky Diode
-20V, -3A,
- Max rDS on = at VGS = -4.5V, ID = -3.0A - Max rDS on = at VGS = -2.5V, ID = -2.2A - Low Gate Charge 3.4nC typ - Compact industry standard SuperSOTTM-6 package

Schottky:
- VF < V at IF = 1A - RoHS Compliant

The FDFC2P100 combine the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. Significant improvement of Thermal Characteristics and Power Dissipation via replacement of independently connected Schottky with internal connection of Schottky Diode Cathode pn to P-Channel PowerTrench MosFET Drain pin.

PIN 1 SuperSOTTM-6

C/D 4 C/D 5 C/D 6
3G 2S 1A

MOSFET Maximum Ratings TA = 25°C unless otherwise noted

Symbol VDS VGS ID

Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous
-Pulsed Power Dissipation

Parameter

VRRM IO TJ, TSTG

Thermal Characteristics

Note 1a

Note 1a Note 1b

Note 1a

Ratings -20 ±12 -3 -6 20 1
-55 to +150

Units V

W V A °C

Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information

Note 1a

Note 1b
°C/W

Device Marking

Device FDFC2P100

Package SSOT-6

Reel Size 7”

Tape Width 8mm

Quantity 3000units
2006 Fairchild Semiconductor Corporation

FDFC2P100 Integrated P-Channel MOSFET and Schottky Diode

Electrical Characteristics TJ = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

IDSS

IGSS

Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current

ID = -250µA, VGS = 0V

ID = -250µA, referenced to 25°C

VGS = 0V, VDS = -16V VGS = ±12V, VDS = 0V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Drain to Source On-Resistance

Forward Transconductance

VGS = VDS, ID = -250µA

ID = -250µA, referenced to 25°C

VGS = -4.5V, ID = -3.0A VGS = -2.5V, ID = -2.2A VGS = -4.5V, ID = -3.0A, TJ = 125°C VDS = -5V, ID = -3.0A

Dynamic Characteristics

Ciss Coss Crss Rg

VDS = -10V, VGS = 0V, f = 1MHz
f = 1MHz

Switching Characteristics
td on tr td off tf Qg TOT Qgs Qgd

Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at -10V Gate to Source Gate Charge Gate to Drain “Miller” Charge

VDD = -10V, ID = -3.0A VGS = -4.5V, RGEN =

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Datasheet ID: FDFC2P100 514151