FDD8870

FDD8870 Datasheet

FDD8870 / FDU8870

Part	Datasheet
FDD8870	FDD8870 (pdf)

Related Parts	Information
FDU8870	FDU8870

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FDD8870 / FDU8870 March 2015 FDD8870 / FDU8870 N-Channel MOSFET 30V, 160A, This N-Channel MOSFET has been designed specifically to improve the overall ef ficiency of DC/ DC converters using either synchronous or conven tional swit ching PW M controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed. • DC/DC converters • rDS ON = VGS = 10V, ID = 35A • rDS ON = VGS = 4.5V, ID = 35A • High performance t rench t echnology for ext remely low rDS ON • Low gate charge • High power and current handling capability S DTO-P-2A5K2 TO-252 I-PAK TO-251AA MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS EAS PD Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed Single Pulse Avalanche Energy Note 2 Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Ratings 30 ±20 160 150 21 Figure 4 690 160 -55 to 175 100 52 Units V A mJ W/oC oC/W oC/W oC/W 2008 Fairchild Semiconductor Corporation FDD8870 / FDU8870 Package Marking and Ordering Information Device Marking FDD8870 FDU8870 F Device FDD8870 FDU8870 Package TO-252AA TO-251AA Reel Size 13” Tube Tape Width 16mm N/A Quantity 2500 units 75 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 24V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 35A, VGS = 10V ID = 35A, VGS = 4.5V ID TJ 3157A5,oCVGS 10V, Dynamic Characteristics CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 35A Ig = 1.0mA Switching Characteristics VGS = 10V

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FDD8870 / FDU8870

March 2015

FDD8870 / FDU8870

N-Channel MOSFET 30V, 160A,

This N-Channel MOSFET has been designed specifically to improve the overall ef ficiency of DC/ DC converters using either synchronous or conven tional swit ching PW M controllers. It has been optimized for low gate charge, low rDS ON and fast switching speed.
• DC/DC converters
• rDS ON = VGS = 10V, ID = 35A
• rDS ON = VGS = 4.5V, ID = 35A
• High performance t rench t echnology for ext remely low
rDS ON
• Low gate charge
• High power and current handling capability

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Parameter

VDSS VGS

EAS PD

Drain to Source Voltage

Gate to Source Voltage

Drain Current Continuous TC = 25oC, VGS = 10V Note 1 Continuous TC = 25oC, VGS = 4.5V Note 1 Continuous Tamb = 25oC, VGS = 10V, with = 52oC/W Pulsed

Single Pulse Avalanche Energy Note 2

Power dissipation Derate above 25oC

TJ, TSTG

Operating and Storage Temperature

Thermal Characteristics

Thermal Resistance Junction to Case TO-252, TO-251

Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

Ratings 30 ±20
160 150 21 Figure 4 690 160 -55 to 175
100 52

Units V

A mJ W/oC
oC/W oC/W oC/W
2008 Fairchild Semiconductor Corporation

FDD8870 / FDU8870
Package Marking and Ordering Information

Device Marking FDD8870 FDU8870 F

Device FDD8870 FDU8870

Package TO-252AA TO-251AA

Reel Size 13” Tube

Tape Width 16mm N/A

Quantity 2500 units
75 units

Electrical Characteristics TC = 25°C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

Gate to Source Leakage Current

ID = 250µA, VGS = 0V

VDS = 24V VGS = 0V

TC = 150oC

VGS = ±20V

On Characteristics

VGS TH

Gate to Source Threshold Voltage
rDS ON

Drain to Source On Resistance

VGS = VDS, ID = 250µA

ID = 35A, VGS = 10V

ID = 35A, VGS = 4.5V

ID TJ
3157A5,oCVGS
10V,

Dynamic Characteristics

CISS COSS CRSS RG Qg TOT Qg 5 Qg TH Qgs Qgs2 Qgd

VDS = 15V, VGS = 0V, f = 1MHz

VGS = 0.5V, f = 1MHz

VGS = 0V to 10V

VGS = 0V to 5V VGS = 0V to 1V

VDD = 15V ID = 35A Ig = 1.0mA

Switching Characteristics VGS = 10V

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Datasheet ID: FDD8870 514147