FDD6N50TF
FDD6N50TF Datasheet
FDD6N50/FDU6N50 500V N-Channel MOSFET
| Part | Datasheet |
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FDD6N50TF |
FDD6N50TF (pdf) |
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| FDD6N50/FDU6N50 500V N-Channel MOSFET FDD6N50/FDU6N50 500V N-Channel MOSFET • 6A, 500V, RDS on = = 10 V • Low gate charge typical nC • Low Crss typical 9 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2006 UniFET TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D-PAK G S FDD Series I-PAK FDU Series Absolute Maximum Ratings VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 Gate-Source voltage Single Pulsed Avalanche Energy Note 2 Avalanche Current Note 1 Repetitive Avalanche Energy Note 1 Peak Diode Recovery dv/dt Note 3 Power Dissipation TC = 25°C - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDD6N50/FDU6N50 500 6 24 ±30 270 6 89 -55 to +150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking FDD6N50 FDU6N50 Device FDD6N50TM FDD6N50TF FDU6N50TU Package D-PAK D-PAK I-PAK Reel Size 380mm Tape Width 16mm Quantity 2500 2000 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Conditions Min. Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V IGSSR On Characteristics VGS th Gate Threshold Voltage VDS = VGS, ID = 250µA RDS on Static Drain-Source On-Resistance VGS = 10V, ID = 3A Forward Transconductance Dynamic Characteristics VDS = 40V, ID = 3A Note 4 -- |
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