FDD6780A

FDD6780A Datasheet

FDD6780A / FDU6780A_F071 N-Channel Power MOSFET

Part	Datasheet
FDD6780A	FDD6780A (pdf)

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDD6780A / FDU6780A_F071 N-Channel Power MOSFET FDD6780A / FDU6780A_F071 N-Channel MOSFET March 2015 25 V, Features - Max rDS on = at VGS = 10 V, ID = A - Max rDS on = at VGS = V, ID = A - 100% UIL test - RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed. - Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture S D-PAK TO-252 Short-Lead I-PAK TO-251AA MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics Note 1a Note 3 Note 1a Ratings 25 ±20 30 48 100 24 -55 to +175 Units V mJ W °C Thermal Resistance, Junction to Case TO-252, TO-251 Thermal Resistance, Junction to Ambient TO-252 Note 1a Package Marking and Ordering Information °C/W Device Marking FDD6780A FDU6780A Device FDD6780A FDU6780A_F071 Package D-PAK TO-252 TO-251AA Reel Size 13 ’’ N/A Tube Tape Width 16 mm N/A Quantity 2500 units 75 units 2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 N-Channel Power MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V Breakdown Voltage Temperature Coefficient ID = 250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V On Characteristics VGS th Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient rDS on Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250 µA ID = 250 µA, referenced to 25 °C VGS = 10 V, ID = A VGS = 10 V, ID = A Short-Lead I-PAK version VGS = V, ID = A VGS = V, ID = A Short-Lead I-PAK version VGS = 10 V, ID = A, TJ = 150 °C VDS = 5 V, ID = A Dynamic Characteristics PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: Semiconductor Components Industries, LLC N. American Technical Support 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support Phone 421 33 790 2910 Japan Customer Focus Center Phone 81−3−5817−1050 ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

FDD6780A / FDU6780A_F071 N-Channel Power MOSFET

FDD6780A / FDU6780A_F071

N-Channel MOSFET

March 2015
25 V, Features
- Max rDS on = at VGS = 10 V, ID = A - Max rDS on = at VGS = V, ID = A - 100% UIL test - RoHS Compliant

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS on and fast switching speed.
- Vcore DC-DC for Desktop Computers and Servers - VRM for Intermediate Bus Architecture

S D-PAK TO-252

Short-Lead I-PAK

TO-251AA

MOSFET Maximum Ratings TC = 25 °C unless otherwise noted

Symbol VDS VGS

EAS PD TJ, TSTG

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous Package limited -Continuous Silicon limited -Continuous -Pulsed

TC = 25 °C TC = 25 °C TA = 25 °C

Single Pulse Avalanche Energy

Power Dissipation

TC = 25 °C

Power Dissipation

TA = 25 °C

Operating and Storage Junction Temperature Range

Thermal Characteristics

Note 1a Note 3

Note 1a

Ratings 25 ±20 30 48 100 24
-55 to +175

Units V
mJ W °C

Thermal Resistance, Junction to Case TO-252, TO-251

Thermal Resistance, Junction to Ambient TO-252

Note 1a
Package Marking and Ordering Information
°C/W

Device Marking FDD6780A FDU6780A

Device FDD6780A FDU6780A_F071

Package D-PAK TO-252

TO-251AA

Reel Size 13 ’’

N/A Tube

Tape Width 16 mm N/A

Quantity 2500 units
75 units
2009 Fairchild Semiconductor Corporation

FDD6780A / FDU6780A_F071 N-Channel Power MOSFET

Electrical Characteristics TJ = 25 °C unless otherwise noted

Parameter

Test Conditions

Off Characteristics

BVDSS

Drain to Source Breakdown Voltage

ID = 250 µA, VGS = 0 V

Breakdown Voltage Temperature Coefficient

ID = 250 µA, referenced to 25 °C

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V, VGS = 0 V

IGSS

Gate to Source Leakage Current

VGS = ±20 V, VDS = 0 V

On Characteristics

VGS th

Gate to Source Threshold Voltage

Gate to Source Threshold Voltage Temperature Coefficient
rDS on

Static Drain to Source On Resistance

Forward Transconductance

VGS = VDS, ID = 250 µA

ID = 250 µA, referenced to 25 °C

VGS = 10 V, ID = A VGS = 10 V, ID = A Short-Lead I-PAK version

VGS = V, ID = A VGS = V, ID = A Short-Lead I-PAK version

VGS = 10 V, ID = A, TJ = 150 °C VDS = 5 V, ID = A

Dynamic Characteristics
PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email:

Semiconductor Components Industries, LLC

N. American Technical Support 800−282−9855 Toll Free USA/Canada

Europe, Middle East and Africa Technical Support Phone 421 33 790 2910

Japan Customer Focus Center Phone 81−3−5817−1050

ON Semiconductor Website Order Literature For additional information, please contact your local Sales Representative

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Datasheet ID: FDD6780A 514135