BD651-S

BD651-S Datasheet

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS

Part	Datasheet
BD651-S	BD651-S (pdf)

Related Parts	Information
BD649-S	BD649-S
BD647-S	BD647-S
BD645-S	BD645-S

PDF Datasheet Preview
BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS RoHS compliant* Designed for Complementary Use with BD646, BD648, BD650 and BD652 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BD645 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range BD647 BD649 BD651 BD645 BD647 BD649 BD651 VCBO VCEO VEBO IC ICM IB Ptot Tj Tstg Lead temperature mm from case for 10 seconds VALUE 80 100 120 140 60 80 100 120 5 8 12 2 50 -65 to +150 -65 to +150 UNIT V A W mJ °C °C °C NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = 5 mA, RBE = 100 VBE off = 0, RS = VCC = 20 V. How to Order Device Package Carrier Order As BDxxx TO-220 Tube BDxxx-S Insert xxx transistor type number 645, 647, 649, etc. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX

PDF Datasheet Preview

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS

RoHS compliant*

Designed for Complementary Use with BD646, BD648, BD650 and BD652 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A

TO-220 PACKAGE TOP VIEW

Pin 2 is in electrical contact with the mounting base.

MDTRACA
absolute maximum ratings at 25°C case temperature unless otherwise noted

RATING

BD645

OBSOLETE Collector-base voltage IE = 0

Collector-emitter voltage IB = 0

Emitter-base voltage Continuous collector current Peak collector current see Note 1 Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 2 Continuous device dissipation at or below 25°C free air temperature see Note 3 Unclamped inductive load energy see Note 4 Operating junction temperature range Storage temperature range

BD647 BD649 BD651 BD645 BD647 BD649 BD651

VCBO

VCEO

VEBO IC ICM IB Ptot

Tj Tstg

Lead temperature mm from case for 10 seconds

VALUE 80 100 120 140 60 80 100 120 5 8 12 2 50
-65 to +150 -65 to +150

UNIT

V A W mJ °C °C °C

NOTES This value applies for tp ms, duty cycle Derate linearly to 150°C case temperature at the rate of W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

This rating is based on the capability of the transistor to operate safely in a circuit of L = 20 mH, IB on = 5 mA, RBE = 100 VBE off = 0, RS = VCC = 20 V.

How to Order

Device

Package Carrier

Order As

BDxxx

TO-220 Tube

BDxxx-S

Insert xxx transistor type number 645, 647, 649, etc.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8,

Specifications are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their specific applications.

BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature unless otherwise noted

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived BD651-S Datasheet file may be downloaded here without warranties.

Datasheet ID: BD651-S 522109