FDD6696

FDD6696 Datasheet

FDD6696/FDU6696

Part	Datasheet
FDD6696	FDD6696 (pdf)

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FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Motor drives • 50A, 30 V RDS ON = VGS = 10 V RDS ON = VGS = V • Low gate charge 17nC typical • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter Ratings V DSS V GSS ID TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range 30 ± 16 50 13 100 52 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package Reel Size FDD6696 FDD6696 D-PAK TO-252 13’’ FDU6696 FDU6696 I-PAK TO-251 Tube 40 96 Tape width 12mm N/A Unit s °C/W Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDD6696/FDU6696 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Unit s Drain-Source Avalanche Ratings Note 2 Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=13A 165 mJ Drain-Source Avalanche Current Off Characteristics BV DSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V 30 23 V mV/°C

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FDD6696/FDU6696

December 2002

FDD6696/FDU6696
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• Motor drives
• 50A, 30 V

RDS ON = VGS = 10 V RDS ON = VGS = V
• Low gate charge 17nC typical
• Fast switching
• High performance trench technology for extremely low RDS ON

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

Absolute Maximum Ratings TA=25oC unless otherwise noted

Parameter

Ratings

V DSS V GSS ID

TJ, TSTG

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Note 3

Note 1a

Pulsed

Note 1a

Power Dissipation

Note 3

Note 1a

Note 1b

Operating and Storage Junction Temperature Range
30 ± 16 50 13 100 52 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1 Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

FDD6696

FDD6696

D-PAK TO-252
13’’

FDU6696

FDU6696

I-PAK TO-251

Tube
40 96

Tape width 12mm N/A

Unit s
°C/W

Quantity 2500 units
2002 Fairchild Semiconductor Corporation

FDD6696/FDU6696

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Unit s

Drain-Source Avalanche Ratings Note 2

Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=13A
165 mJ

Drain-Source Avalanche Current

Off Characteristics

BV DSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V
30 23

V mV/°C

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Datasheet ID: FDD6696 514131