FDD6688S
FDD6688S Datasheet
FDD6688S 30V N-Channel SyncFET
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FDD6688S |
FDD6688S (pdf) |
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| FDD6688S 30V N-Channel SyncFET November 2007 FDD6688S 30V N-Channel SyncFET The FDD6688S is designed to replace a single TO-252 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDD6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • DC/DC converter • Motor Drives • 88 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Low gate charge 31 nC typical • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Ratings 30 ± 20 88 100 69 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6688S FDD6688S D-PAK TO-252 Reel Size 13’’ Tape width 12mm Units °C °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDD6688S 30V N-Channel SyncFET Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID = 21A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 1mA ID = 10mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static |
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