FQPF44N08

FQPF44N08 Datasheet


FQPF44N08

Part Datasheet
FQPF44N08 FQPF44N08 FQPF44N08 (pdf)
Related Parts Information
FQPF44N08T FQPF44N08T FQPF44N08T
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FQPF44N08

FQPF44N08
80V N-Channel MOSFET

August 2000

QFETTM

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
• 25A, 80V, RDS on = = 10 V
• Low gate charge typical 38 nC
• Low Crss typical 90 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

TO-220F

FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol VDSS ID

IDM VGSS EAS IAR EAR dv/dt PD

TJ, TSTG

Parameter

Drain-Source Voltage

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C

Drain Current - Pulsed

Note 1

Gate-Source Voltage

Single Pulsed Avalanche Energy

Note 2

Avalanche Current

Note 1

Repetitive Avalanche Energy

Note 1

Peak Diode Recovery dv/dt

Note 3

Power Dissipation TC = 25°C - Derate above 25°C

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient

FQPF44N08 80 25 100 ± 25 450 25 41
-55 to +175

Units V A V mJ A mJ

V/ns W

W/°C °C

Units °C/W °C/W
2000 Fairchild Semiconductor International

FQPF44N08
More datasheets: AT49SV322D-80CU | DFR0072 | 240-021-12 | 240-053 | 300-031 | 340-015 | 340-002 | M64820 SL001 | M64820 SL002 | M64820 SL005


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Datasheet ID: FQPF44N08 515412