FDD6632
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FDD6632 (pdf) |
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FDD6632 October 2004 FDD6632 N-Channel Logic Level Trench Power MOSFET 30V, 9A, This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching • rDS ON = Typ , VGS = 10V, ID = 9A Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. • rDS ON = Typ , VGS = 4.5V, ID = 6A • Qg TOT Typ = 2.6nC, VGS = 5V Formerly developmental type 83317 • DC/DC converters • Qgd Typ = 0.8nC • CISS Typ = 255pF S DTO-P-2A5K2 TO-252 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC = 25oC, VGS = 10V Continuous TC = 100oC, VGS = 4.5V Continuous TC = 25oC, VGS = 10V, = 52oC/W Pulsed Power dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Thermal Resistance Junction to Case TO-252 Thermal Resistance Junction to Ambient TO-252 Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area Package Marking and Ordering Information Device Marking FDD6632 Device FDD6632 Package TO-252AA Reel Size 330mm Ratings 30 ±20 9 6 4 Figure 4 15 -55 to 175 10 100 52 Units V A W/oC oC/W oC/W oC/W Tape Width 16mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6632 Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 25V VGS = 0V TC = 150oC VGS = ±20V On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID = 9A, VGS = 10V ID = 6A, VGS = 4.5V Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgd VDS = 15V, VGS = 0V, f = 1MHz VGS = 0V to 5V VGS = 0V to 1V VDD = 15V ID = 9A |
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