AO5404E_001
AO5404E_001 Datasheet
AO5404E N-Channel Enhancement Mode Field Effect Transistor
| Part | Datasheet |
|---|---|
AO5404E_001 |
AO5404E_001 (pdf) |
| Related Parts | Information |
|---|---|
AO5404EL |
AO5404EL |
| PDF Datasheet Preview |
|---|
| AO5404E N-Channel Enhancement Mode Field Effect Transistor The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical. -RoHS compliant -AO5404EL is Halogen Free VDS V = 20V ID = A VGS = 4.5V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V ESD PROTECTED! SC89-3L Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter 10 Sec Steady State Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A, F TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t 10s Steady-State Steady-State Typ 275 360 300 Max 330 450 350 Units V W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO5404E Electrical Characteristics TJ=25°C unless otherwise noted Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS th ID ON Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250µA, VGS=0V VDS=20V, VGS=0V |
| More datasheets: 119091029 | 26800B-545 | 7344-V7C2-ASVA-MS | T0052920699N | GTB028EUB16 N1 | S2235-O-M | S2235-O-T | SC004221 | 13906 | AO5404EL |
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