AO5404E_001

AO5404E_001 Datasheet


AO5404E N-Channel Enhancement Mode Field Effect Transistor

Part Datasheet
AO5404E_001 AO5404E_001 AO5404E_001 (pdf)
Related Parts Information
AO5404EL AO5404EL AO5404EL
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AO5404E N-Channel Enhancement Mode Field Effect Transistor

The AO5404E/L uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical.
-RoHS compliant -AO5404EL is Halogen Free

VDS V = 20V ID = A VGS = 4.5V RDS ON < VGS = 4.5V RDS ON < VGS = 2.5V RDS ON < VGS = 1.8V

ESD PROTECTED!

SC89-3L

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter
10 Sec

Steady State

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain TA=25°C

Current A, F

TA=70°C

Pulsed Drain Current B

TA=25°C Power Dissipation A TA=70°C

Junction and Storage Temperature Range TJ, TSTG
-55 to 150

Thermal Characteristics Parameter

Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t 10s Steady-State

Steady-State

Typ 275 360 300

Max 330 450 350

Units V

W °C

Units °C/W °C/W °C/W

Alpha & Omega Semiconductor, Ltd.

AO5404E

Electrical Characteristics TJ=25°C unless otherwise noted

Parameter

Conditions

STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSS

VGS th ID ON

Gate-Body leakage current

Gate Threshold Voltage On state drain current

ID=250µA, VGS=0V VDS=20V, VGS=0V
More datasheets: 119091029 | 26800B-545 | 7344-V7C2-ASVA-MS | T0052920699N | GTB028EUB16 N1 | S2235-O-M | S2235-O-T | SC004221 | 13906 | AO5404EL


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Datasheet ID: AO5404E_001 516202