FDD3672-F085
FDD3672-F085 Datasheet
FDD3672_F085 N-Channel UltraFET Trench MOSFET
| Part | Datasheet |
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FDD3672-F085 |
FDD3672-F085 (pdf) |
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| FDD3672_F085 N-Channel UltraFET Trench MOSFET March 2011 FDD3672_F085 N-Channel UltraFET Trench MOSFET 100V, 44A, 28mΩ - Typ rDS on = 24mΩ at VGS = 10V, ID = 44A - Typ Qg 10 = 24nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - Optimized efficiency at high frequencies - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - DC/DC converters and Off-Line UPS - Distributed Power Architectures and VRMs - Primary Switch for 24V and 48V Systems - High Voltage Synchronous Rectifier FDD3672_F085 N-Channel UltraFET Trench MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 30oC, VGS = 10V Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics Note 1 Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper pad area Ratings 100 ±20 44 See Figure 4 73 144 -55 to +175 Units V A mJ W W/oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDD3672 FDD3672_F085 Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Off Characteristics Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current On Characteristics ID = 250uA, VGS = 0V VDS = 80V, VGS = 0V TJ = 150oC VGS = ±20V ±100 nA VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance Dynamic Characteristics VGS = VDS, ID = 250uA ID = 44A, VGS= 10V ID = 21A, VGS= 6V, ID = 44A, VGS= 10V, TJ = 175°C Ciss Coss Crss VDS = 25V, VGS = 0V, f = 1MHz 1635 Qg TOT Total Gate Charge at 10V VGS = 0 to 10V Qg TH Qgs Qgs2 Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau VGS = 0 to 2V VDD = 50V ID = 44A |
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