FDPF15N65YDTU

FDPF15N65YDTU Datasheet

FDPF15N65 N-Channel UniFETTM MOSFET

Part	Datasheet
FDPF15N65YDTU	FDPF15N65YDTU (pdf)

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FDPF15N65 N-Channel UniFETTM MOSFET FDPF15N65 N-Channel UniFETTM MOSFET 650 V, 15 A, 440 mΩ • RDS on = 360 mΩ Typ. VGS = 10 V, ID = A • Low Gate Charge Typ. nC • Low Crss Typ. pF • 100% Avalanche Tested • LCD/LED/PDP TV and Monitor • Uninterruptible Power Supply November 2013 UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts. TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Parameter VDSS ID Drain-Source Voltage Drain Current Drain Current - Continuous TC = 25°C - Continuous TC = 100°C - Pulsed Note 1 VGSS EAS IAR EAR dv/dt Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Note 2 Note 1 Note 1 Note 3 Power Dissipation TC = 25°C - Derate Above 25°C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Drain current limited by maximum junction termperature. Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FDPF15N65 650 15* 60* ± 30 637 15 -55 to +150 300 FDPF15N65 Unit V A V mJ A mJ V/ns W W/°C °C °C Unit °C/W 2006 Fairchild Semiconductor Corporation FDPF15N65 N-Channel UniFETTM MOSFET Package Marking and Ordering Information Part Number FDPF15N65 Top Mark FDPF15N65 Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25°C unless otherwise noted. Parameter Conditions Off Characteristics BVDSS / IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward IGSSR On Characteristics VGS = 0 V, ID = 250 uA, TJ = 25°C ID = 250 uA, Referenced to 25°C VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 uA VGS = 10 V, ID = A Forward Transconductance Dynamic Characteristics VDS = 40 V, ID = A Ciss Input Capacitance Coss Output Capacitance Crss Switching Characteristics VDS = 25 V, VGS = 0 V, f = 1 MHz td on tr Turn-On Delay Time Turn-On Rise Time VDD = 325 V, ID = 15 A, VGS = 10 V, RG = Ω

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FDPF15N65 N-Channel UniFETTM MOSFET

FDPF15N65

N-Channel UniFETTM MOSFET
650 V, 15 A, 440 mΩ
• RDS on = 360 mΩ Typ. VGS = 10 V, ID = A
• Low Gate Charge Typ. nC
• Low Crss Typ. pF
• 100% Avalanche Tested
• LCD/LED/PDP TV and Monitor
• Uninterruptible Power Supply

November 2013

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction PFC , flat panel display FPD TV power, ATX and electronic lamp ballasts.

TO-220F

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Parameter

VDSS ID

Drain-Source Voltage Drain Current

Drain Current
- Continuous TC = 25°C - Continuous TC = 100°C - Pulsed

Note 1

VGSS EAS IAR EAR dv/dt

Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Note 2 Note 1 Note 1 Note 3

Power Dissipation

TC = 25°C
- Derate Above 25°C

TJ, TSTG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.

Thermal Characteristics

Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max.

FDPF15N65 650 15* 60* ± 30 637 15
-55 to +150 300

FDPF15N65

Unit V A V mJ A mJ

V/ns W

W/°C °C °C

Unit
°C/W
2006 Fairchild Semiconductor Corporation

FDPF15N65 N-Channel UniFETTM MOSFET
Package Marking and Ordering Information

Part Number FDPF15N65

Top Mark FDPF15N65

Package TO-220F

Packing Method Tube

Reel Size N/A

Tape Width N/A

Quantity 50 units

Electrical Characteristics TC = 25°C unless otherwise noted.

Parameter

Conditions

Off Characteristics

BVDSS
/ IDSS

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage Current, Forward

IGSSR

On Characteristics

VGS = 0 V, ID = 250 uA, TJ = 25°C

ID = 250 uA, Referenced to 25°C

VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V

VGS th RDS on

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 uA VGS = 10 V, ID = A

Forward Transconductance

Dynamic Characteristics

VDS = 40 V, ID = A

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Switching Characteristics

VDS = 25 V, VGS = 0 V, f = 1 MHz
td on tr

Turn-On Delay Time Turn-On Rise Time

VDD = 325 V, ID = 15 A, VGS = 10 V, RG = Ω

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Datasheet ID: FDPF15N65YDTU 514265