FDD3580
FDD3580 Datasheet
FDD3580/FDU3580
| Part | Datasheet |
|---|---|
FDD3580 |
FDD3580 (pdf) |
| Related Parts | Information |
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FDU3580 |
FDU3580 |
| PDF Datasheet Preview |
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| FDD3580/FDU3580 August 2001 FDD3580/FDU3580 80V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. This MOSFET features faster switching and lower gate change than other MOSFETs with comparable RDS ON specifications resulting in DC/DC power supply designs with higher overall efficiency. • A, 80 V. RDS ON = 29 VGS = 10 V RDS ON = 33 VGS = 6 V • Low gate charge 34nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability DT O-TP -TOD2AO5--KP2-2A5K2 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current-Continuous Note 1a Maximum Drain Current Pulsed Maximum Power Dissipation = 25oC TA = 25oC TA = 25oC Note 1 Note 1a Note 1b Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient Note 1 Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD3580 FDD3580 13’’ FDU3580 FDU3580 Tube Ratings 80 ± 20 50 42 −55 to +175 Tape width 16mm N/A Units °C/W °C/W Quantity 2500 75 Fairchild Semiconductor Corporation FDD3580/FDU3580 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 40 V, ID = A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 64 V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR |
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