FDD2512

FDD2512 Datasheet

FDD2512

Part	Datasheet
FDD2512	FDD2512 (pdf)

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FDD2512 August 2001 FDD2512 150V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • A, 150 V RDS ON = 420 VGS = 10 V RDS ON = 470 VGS = 6 V • Low gate charge 8nC typical • Fast switching • High performance trench technology for extremely low RDS ON S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation Note 3 Note 1a Note 1 Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDD2512 FDD2512 13’’ Ratings 150 ±20 42 −55 to +175 40 96 Tape width 16mm Units °C/W °C/W °C/W Quantity 2500 units Fairchild Semiconductor Corporation FDD2512 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse,VDD = 75 V, ID = 2.2A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS IGSSF IGSSR Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Leakage, Forward ID = 250 µA, Referenced to 25°C VDS = 120 V, VGS = 20 V, VGS = V, VGS = 0 V VDS = 0 V VDS = 0 V On Characteristics Note 2 VGS th RDS on ID on Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain Current

PDF Datasheet Preview

FDD2512

August 2001

FDD2512
150V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• A, 150 V RDS ON = 420 VGS = 10 V RDS ON = 470 VGS = 6 V
• Low gate charge 8nC typical
• Fast switching
• High performance trench technology for extremely
low RDS ON

S TO-252

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation

Note 3 Note 1a

Note 1

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Ambient

Note 1 Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDD2512

FDD2512
13’’

Ratings
150 ±20 42 −55 to +175
40 96

Tape width 16mm

Units
°C/W °C/W °C/W

Quantity 2500 units

Fairchild Semiconductor Corporation

FDD2512

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse,VDD = 75 V, ID = 2.2A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

IGSSF

IGSSR

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

Leakage, Forward

ID = 250 µA, Referenced to 25°C

VDS = 120 V, VGS = 20 V, VGS = V,

VGS = 0 V VDS = 0 V VDS = 0 V

On Characteristics Note 2

VGS th

RDS on

ID on

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static

Drain Current

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Datasheet ID: FDD2512 514108