FDD6612A

FDD6612A Datasheet

FDD6612A/FDU6612A

Part	Datasheet
FDD6612A	FDD6612A (pdf)

Related Parts	Information
FDU6612A	FDU6612A

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FDD6612A/FDU6612A February 2004 FDD6612A/FDU6612A 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package. • DC/DC converter • Motor Drives • 30 A, 30 V RDS ON = 20 VGS = 10 V RDS ON = 28 VGS = V • Low gate charge • Fast Switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Note 3 Note 1a Note 1a PD TJ, TSTG Power Dissipation Note 1 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 30 ±20 30 60 36 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Note 1 Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6612A FDD6612A D-PAK TO-252 FDU6612A FDU6612A I-PAK TO-251 Reel Size 13’’ Tube 45 96 Tape width 12mm N/A Units °C/W °C/W °C/W Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V 30 25 V mV/°C ±100 nA On Characteristics Note 2 VGS th

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FDD6612A/FDU6612A

February 2004

FDD6612A/FDU6612A
30V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package.
• DC/DC converter
• Motor Drives
• 30 A, 30 V

RDS ON = 20 VGS = 10 V RDS ON = 28 VGS = V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely low RDS ON

S DTO-P-2A5K2 TO-252

I-PAK TO-251AA

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current

Pulsed

Note 3 Note 1a Note 1a

PD TJ, TSTG

Power Dissipation

Note 1

Note 1a

Note 1b

Operating and Storage Junction Temperature Range

Ratings
30 ±20 30 60 36 to +175

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Note 1

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Ambient Note 1b
Package Marking and Ordering Information

Device Marking

Device

Package

FDD6612A

FDD6612A

D-PAK TO-252

FDU6612A

FDU6612A

I-PAK TO-251

Reel Size 13’’ Tube
45 96

Tape width 12mm N/A

Units
°C/W °C/W °C/W

Quantity 2500 units
2004 Fairchild Semiconductor Corporation

FDD6612A/FDU6612A

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS = 0 V
30 25

V mV/°C
±100 nA

On Characteristics Note 2

VGS th

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Datasheet ID: FDD6612A 514090