FDU6030BL
FDU6030BL Datasheet
FDD6030BL/FDU6030BL
| Part | Datasheet |
|---|---|
FDU6030BL |
FDU6030BL (pdf) |
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| FDD6030BL/FDU6030BL July 2001 FDD6030BL/FDU6030BL 30V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON , fast switching speed and extremely low RDS ON in a small package. • DC/DC converter • Motor drives • 42 A, 30 V RDS ON = 16 VGS = 10 V RDS ON = 22 VGS = V • Low gate charge 22 nC typical • Fast switching • High performance trench technology for extremely low RDS ON S DTO-P-2A5K2 TO-252 I-PAK TO-251AA Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS V GSS ID TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Note 3 Note 1a Pulsed Note 1a Power Dissipation Note 3 Note 1a Note 1b Operating and Storage Junction Temperature Range Ratings 30 ±20 42 10 100 50 to +175 Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Note 1 Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Package FDD6030BL FDD6030BL D-PAK TO-252 FDU6030BL FDU6030BL I-PAK TO-251 Reel Size 13’’ Tube 45 96 Tape width 12mm N/A Units °C/W °C/W °C/W Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD6030BL/FDU6030BL Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V Drain-Source Avalanche Current Off Characteristics BV DSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA,Referenced to 25°C VDS = 24 V, VGS = 0 V IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V |
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