FDC697P_F077

FDC697P_F077 Datasheet

FDC697P

Part	Datasheet
FDC697P_F077	FDC697P_F077 (pdf)

Related Parts	Information
FDC697P	FDC697P

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FDC697P January 2004 FDC697P P-Channel 1.8V MOSFET This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • Battery management • Load Switch • Battery protection • A, V RDS ON = 20 VGS = V RDS ON = 25 VGS = V RDS ON = 35 VGS = V • High performance trench technology for extremely low RDS ON • Fast switching speed • FLMP SuperSOT-6 package Enhanced thermal performance in industry-standard package size S SuperSOT-6TM FLMP Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDC697P 7’’ Ratings ±8 2 to +150 60 111 Tape width 8mm Units V A W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDC697P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = µA ID = 250 µA, Referenced to 25°C VDS = V, VGS = ±8 V, VGS = 0 V VDS = 0 V mV/°C ±100 nA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static

PDF Datasheet Preview

FDC697P

January 2004

FDC697P

P-Channel 1.8V MOSFET

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.
• Battery management
• Load Switch
• Battery protection
• A, V

RDS ON = 20 VGS = V RDS ON = 25 VGS = V RDS ON = 35 VGS = V
• High performance trench technology for extremely low RDS ON
• Fast switching speed
• FLMP SuperSOT-6 package Enhanced thermal performance in industry-standard package size

S SuperSOT-6TM FLMP

Bottom

Drain

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation

Note 1a Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDC697P
7’’

Ratings
±8 2 to +150
60 111

Tape width 8mm

Units

V A W °C
°C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDC697P

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

IDSS

Breakdown Voltage Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = µA

ID = 250 µA, Referenced to 25°C

VDS = V, VGS = ±8 V,

VGS = 0 V VDS = 0 V
mV/°C
±100 nA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static

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Datasheet ID: FDC697P_F077 514081