FDC6000NZ

FDC6000NZ Datasheet

FDC6000NZ

Part	Datasheet
FDC6000NZ	FDC6000NZ (pdf)

Related Parts	Information
FDC6000NZ_F077	FDC6000NZ_F077

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FDC6000NZ June 2004 FDC6000NZ Dual N-Channel 2.5V Specified MOSFET This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . Packaged in FLMP SSOT-6, the RDS ON and thermal properties of the device are optimized for battery power management applications. • Battery management/Charger Application • Load switch • A, 20 V RDS ON = 20 VGS = V RDS ON = 28 VGS = V • ESD protection diode note 3 • High performance trench technology for extremely low RDS ON • FLMP SSOT-6 package Enhanced thermal performance in industry-standard package size S2 S1 G1 SuperSOT-6TM FLMP G2 S2 S1 MOSFET Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1a Power Dissipation for Dual Operation Note 1a Power Dissipation for Single Operation Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1a Package Marking and Ordering Information Device Marking Device Reel Size .0NZ FDC6000NZ 7’’ Fairchild Semiconductor Corporation Bottom Drain Contact Bottom Drain Contact Ratings 20 ±12 20 to +150 Tape width 8mm Units °C/W Quantity 3000 units FDC6000NZ Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±12 V, VGS = 0 V VDS = 0 V mV/°C ± 10 µA On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on

PDF Datasheet Preview

FDC6000NZ

June 2004

FDC6000NZ

Dual N-Channel 2.5V Specified MOSFET

This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V 12V . Packaged in FLMP SSOT-6, the RDS ON and thermal properties of the device are optimized for battery power management applications.
• Battery management/Charger Application
• Load switch
• A, 20 V RDS ON = 20 VGS = V RDS ON = 28 VGS = V
• ESD protection diode note 3
• High performance trench technology for extremely
low RDS ON
• FLMP SSOT-6 package Enhanced thermal
performance in industry-standard package size

S2 S1 G1

SuperSOT-6TM FLMP

G2 S2 S1

MOSFET Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed

Note 1a

Power Dissipation for Dual Operation

Note 1a

Power Dissipation for Single Operation

Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1a
Package Marking and Ordering Information

Device Marking

Device

Reel Size
.0NZ

FDC6000NZ
7’’

Fairchild Semiconductor Corporation

Bottom Drain Contact

Bottom Drain Contact

Ratings
20 ±12 20 to +150

Tape width 8mm

Units
°C/W

Quantity 3000 units

FDC6000NZ

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Breakdown Voltage

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 16 V, VGS = ±12 V,

VGS = 0 V VDS = 0 V
mV/°C
± 10 µA

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

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Datasheet ID: FDC6000NZ 514070