FDC3616N

FDC3616N Datasheet

FDC3616N

Part	Datasheet
FDC3616N	FDC3616N (pdf)

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FDC3616N January 2004 FDC3616N 100V N-Channel MOSFET This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed. • DC/DC converter • Load Switching • A, 100 V. RDS ON = 70 VGS = 10 V RDS ON = 80 VGS = V • High performance trench technology for extremely low RDS ON • Low gate charge 23nC typical • High power and current handling capability • Fast switching speed. S SuperSOT-6TM FLMP Bottom Drain Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation Note 1a Note 1a Note 1b TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1a Note 1b Package Marking and Ordering Information Device Marking Device Reel Size FDC3616N 7’’ Ratings 100 ± 20 2 −55 to +150 60 111 Tape width 8mm Units V A W °C °C/W Quantity 3000 units Fairchild Semiconductor Corporation FDC3616N Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 WDSS Drain-Source Avalanche Energy Single Pulse,VDD = 50 V, ID= 3.7A Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS IGSSF IGSSR On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient Static On Resistance Forward Transconductance Dynamic Characteristics Ciss Input Capacitance

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FDC3616N

January 2004

FDC3616N
100V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS ON and fast switching speed.
• DC/DC converter
• Load Switching
• A, 100 V.

RDS ON = 70 VGS = 10 V RDS ON = 80 VGS = V
• High performance trench technology for extremely low RDS ON
• Low gate charge 23nC typical
• High power and current handling capability
• Fast switching speed.

S SuperSOT-6TM FLMP

Bottom Drain

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Maximum Power Dissipation

Note 1a Note 1a

Note 1b

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Note 1a Note 1b
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDC3616N
7’’

Ratings
100 ± 20
2 −55 to +150
60 111

Tape width 8mm

Units

V A W °C
°C/W

Quantity 3000 units

Fairchild Semiconductor Corporation

FDC3616N

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

WDSS

Drain-Source Avalanche Energy

Single Pulse,VDD = 50 V, ID= 3.7A

Drain-Source Avalanche Current

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS IGSSF IGSSR

On Characteristics Note 2

VGS th

Gate Threshold Voltage

RDS on

Gate Threshold Voltage Temperature Coefficient

Static On Resistance

Forward Transconductance

Dynamic Characteristics

Ciss

Input Capacitance

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDC3616N Datasheet file may be downloaded here without warranties.

Datasheet ID: FDC3616N 514069