FDB8444_F085 N-Channel MOSFET
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FDB8444_F085 N-Channel MOSFET MPLEMENTATION October 2010 FDB8444_F085 N-Channel MOSFET 40V, 70A, 5.5mΩ - Typ rDS on = 3.9mΩ at VGS = 10V, ID = 70A - Typ Qg TOT = 91nC at VGS = 10V - Low Miller Charge - Low Qrr Body Diode - UIS Capability Single Pulse and Repetitive Pulse - Qualified to AEC Q101 - RoHS Compliant - Automotive Engine Control - Powertrain Management - Solenoid and Motor Drivers - Electronic Transmission - Distributed Power Architecture and VRMs - Primary Switch for 12V Systems AD FREE I GATE SOURCE TO-263AB FDB SERIES DRAIN FLANGE 2010 Fairchild Semiconductor Corporation FDB8444_F085 N-Channel MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous VGS = 10V Pulsed Note 1 Single Pulse Avalanche Energy Power Dissipation Derate above 25oC Note 2 TJ, TSTG Operating and Storage Temperature Thermal Characteristics Maximum Thermal Resistance, Junction to Case Maximum Thermal Resistance, Junction to Ambient TO-263, lin2 copper pad area Ratings 40 ± 20 70 Figure 4 307 167 -55 to +175 Units V A mJ W/oC oC/W oC/W Package Marking and Ordering Information Device Marking Device FDB8444 FDB8444_F085 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250uA, VGS = 0V VDS = 32V VGS = 0V TJ =150°C VGS = ±20V 250 uA ±100 nA On Characteristics VGS th Gate to Source Threshold Voltage rDS on Drain to Source On Resistance VDS = VGS, ID = 250uA ID = 70A, VGS = 10V ID = 70A, VGS = 10V, TJ = 175°C Dynamic Characteristics Ciss Coss Crss RG Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VGS = 0 to 2V VDD = 20V, ID = 70A, |
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