FDB7030L_L86Z

FDB7030L_L86Z Datasheet

FDP7030L / FDB7030L

Part	Datasheet
FDB7030L_L86Z	FDB7030L_L86Z (pdf)

Related Parts	Information
FDB7030L	FDB7030L
FDP7030L	FDP7030L

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FDP7030L / FDB7030L June 2003 FDP7030L / FDB7030L N-Channel Logic Level MOSFET This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS ON and fast switching speed. • 80A, 30 V RDS ON = 7 VGS = 10 V RDS ON = 10 VGS = V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS ON • 175°C maximum junction temperature rating TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed Note 1 Total Power Dissipation TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB7030L FDB7030L 13’’ FDP7030L FDP7030L Tube Ratings 30 ± 20 80 240 68 to +175 Tape width 24mm n/a Units W/°C °C/W °C/W Quantity 800 units 2003 Fairchild Semiconductor Corporation FDP7030L / FDB7030L Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 1 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 80 A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V

PDF Datasheet Preview

FDP7030L / FDB7030L

June 2003

FDP7030L / FDB7030L

N-Channel Logic Level MOSFET

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.

It has been optimized for low gate charge, low RDS ON and fast switching speed.
• 80A, 30 V

RDS ON = 7 VGS = 10 V RDS ON = 10 VGS = V
• Critical DC electrical parameters specified at elevated temperature
• High performance trench technology for extremely low RDS ON
• 175°C maximum junction temperature rating

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

Note 1

Total Power Dissipation TC = 25°C Derate above 25°C

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB7030L

FDB7030L
13’’

FDP7030L

FDP7030L

Tube

Ratings
30 ± 20 80 240 68 to +175

Tape width 24mm n/a

Units

W/°C
°C/W °C/W

Quantity 800 units
2003 Fairchild Semiconductor Corporation

FDP7030L / FDB7030L

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 1

WDSS

Single Pulse Drain-Source Avalanche Energy

VDD = 15 V,

ID = 80 A

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

IGSS

Leakage

VGS = 0 V,

ID = 250 µA

ID = 250 µA, Referenced to 25°C

VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V

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Datasheet ID: FDB7030L_L86Z 514056