AO4619
AO4619 Datasheet
AO4619
| Part | Datasheet |
|---|---|
AO4619 |
AO4619 (pdf) |
| PDF Datasheet Preview |
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| AO4619 Complementary Enhancement Mode Field Effect Transistor The AO4619 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Product Summary N-Channel VDS V = 30V ID = 7.4A VGS=10V RDS ON < VGS=10V < VGS=4.5V P-Channel -30V -5.2A VGS = -10V RDS ON < VGS = -10V < VGS = -4.5V 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S2 1 G2 2 S1 3 G1 4 8 D2 7 D2 6 D1 5 D1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain TA=25°C Current F TA=70°C Pulsed Drain Current B Power DissipationA TA=25°C TA=70°C Avalanche Current B Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range TJ, TSTG -55 to 150 Max p-channel -30 ±20 -25 2 11 18 -55 to 150 p-channel Units V W A mJ °C |
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