FDB6690S
FDB6690S Datasheet
FDP6690S/FDB6690S
| Part | Datasheet |
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FDB6690S |
FDB6690S (pdf) |
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| FDP6690S/FDB6690S SEPTEMBER 2001 FDP6690S/FDB6690S 30V N-Channel SyncFET This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS ON and low gate charge. The FDP6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDP6690S/FDB6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDP6035AL/FDB6035AL in parallel with a Schottky diode. • 21 A, 30 V. RDS ON = VGS = 10 V RDS ON = VGS = V • Includes SyncFET Schottky body diode • Low gate charge 11nC typical • High performance trench technology for extremely low RDS ON and fast switching • High power and current handling capability TO-220 TO-263AB FDP Series FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted Parameter VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Note 1 TJ, TSTG TL Total Power Dissipation TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB6690S FDB6690S 13’’ FDP6690S FDP6690S Tube Ratings 30 ±20 42 140 48 to +150 275 Tape width 24mm n/a Units W/°C °C °C °C/W °C/W Quantity 800 units 2001 Fairchild Semiconductor Corporation FDP6690S/FDB6690S Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 2 W DSS Drain-Source Avalanche Energy Single Pulse, VDD = 25 V, ID=11A Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF Leakage, Forward IGSSR VGS = 0 V, ID = 1mA ID = 10mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = V, VDS = 0 V On Characteristics Note 2 |
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