FDP6035AL
FDP6035AL Datasheet
FDP6035AL/FDB6035AL
| Part | Datasheet |
|---|---|
FDP6035AL |
FDP6035AL (pdf) |
| PDF Datasheet Preview |
|---|
| FDP6035AL/FDB6035AL July 2003 FDP6035AL/FDB6035AL N-Channel Logic Level MOSFET This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS ON and fast switching speed. • 48 A, 30 V RDS ON = 12 VGS = 10 V RDS ON = 14 VGS = V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS ON • 175°C maximum junction temperature rating TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Note 1 Total Power Dissipation TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB6035AL FDB6035AL 13’’ FDP6035AL FDP6035AL Tube Ratings 30 ± 20 48 180 52 to +175 Tape width 24mm n/a Units W/°C °C/W Quantity 800 units 2003 Fairchild Semiconductor Corporation FDP6035AL/FDB6035AL Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 1 Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 48 A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V IGSS Leakage VGS = ± 20 V, VDS = 0 V |
| More datasheets: FS-9091 | FS-9088 | CC-9P-NET | CC-9P-V225-Z1 | IR1503 | CS35L00-CNZR | CS35L00-CNZ | M239024 SL005 | M239024 SL002 | M239024 SL001 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived FDP6035AL Datasheet file may be downloaded here without warranties.