FDB6021P
FDB6021P Datasheet
FDB6021P
| Part | Datasheet |
|---|---|
FDB6021P |
FDB6021P (pdf) |
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| FDB6021P January 2004 FDB6021P 20V P-Channel 1.8V Specified MOSFET This P-Channel power MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for power management applications. • Battery management • Load switch • Voltage regulator • A, V. RDS ON = 30 VGS = V RDS ON = 40 VGS = V RDS ON = 65 VGS = V • Critical DC electrical parameters specified at elevated temperature • High performance trench technology for extremely low RDS ON • 175°C maximum junction temperature rating TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed Note 1 Total Power Dissipation TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB6021P FDB6021P 13” Ratings ±8 37 to +175 Tape width 24mm Fairchild Semiconductor Corporation Units W°C °C °C/W °C/W Quantity 800 units FDB6021P Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = µA,Referenced to 25°C VDS = V, VGS = 0 V mV/°C IGSSF Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR VGS = V VDS = 0 V On Characteristics Note 2 VGS th Gate Threshold Voltage RDS on Gate Threshold Voltage Temperature Coefficient |
| More datasheets: B59069B1080B151 | B59042B1120B151 | B59024S1120A151 | B59023S1120A70 | B59184B1120A151 | A-2004-0-2-LP/S-R | TEL0092 | 978 | ATF15XX-DK | 361 |
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