FDP2670

FDP2670 Datasheet

FDP2670/FDB2670

Part	Datasheet
FDP2670	FDP2670 (pdf)

Related Parts	Information
FDB2670	FDB2670

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FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel MOSFET This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications. The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency. • 19 A, 200 V. RDS ON = 130 VGS = 10 V • Low gate charge 27 nC typical • Fast switching speed • High performance trench technology for extremely low RDS ON • High power and current handling capability TO-220 FDP Series TO-263AB FDB Series Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID dv/dt Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Note 1 Pulsed Note 1 Total Power Dissipation TC = 25°C Derate above 25°C Peak Diode Recovery dv/dt Note 3 TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size FDB2670 FDB2670 13’’ FDP2670 FDP2670 Tube Ratings 200 ± 20 19 40 93 to +175 Tape width 24mm n/a Units V A W°/C V/ns °C °C/W °C/W Quantity 800 units 45 units Fairchild Semiconductor Corporation FDP2670/FDB2670 Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Drain-Source Avalanche Ratings Note 1 WDSS Single Pulse Drain-Source Avalanche Energy VDD = 100 V, ID = 10 A Maximum Drain-Source Avalanche Current Off Characteristics BVDSS IDSS Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 160 V, VGS = 0 V IGSSF Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR VGS = V VDS = 0 V

PDF Datasheet Preview

FDP2670/FDB2670

November 2001

FDP2670/FDB2670
200V N-Channel MOSFET

This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS ON specifications.

The result is a MOSFET that is easy and safer to drive even at very high frequencies , and DC/DC power supply designs with higher overall efficiency.
• 19 A, 200 V. RDS ON = 130 VGS = 10 V
• Low gate charge 27 nC typical
• Fast switching speed
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability

TO-220

FDP Series

TO-263AB

FDB Series

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID
dv/dt

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current Continuous

Note 1

Pulsed

Note 1

Total Power Dissipation TC = 25°C

Derate above 25°C

Peak Diode Recovery dv/dt

Note 3

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information

Device Marking

Device

Reel Size

FDB2670

FDB2670
13’’

FDP2670

FDP2670

Tube

Ratings
200 ± 20 19 40 93 to +175

Tape width 24mm n/a

Units

V A W°/C V/ns °C
°C/W °C/W

Quantity 800 units 45 units

Fairchild Semiconductor Corporation

FDP2670/FDB2670

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Drain-Source Avalanche Ratings Note 1

WDSS

Single Pulse Drain-Source Avalanche Energy

VDD = 100 V,

ID = 10 A

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

IDSS

Breakdown Voltage

Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 160 V, VGS = 0 V

IGSSF

Leakage, Forward

VGS = 20 V, VDS = 0 V

IGSSR

VGS = V VDS = 0 V

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Datasheet ID: FDP2670 514045